TITLE

Identification of the major residual donor in unintentionally doped InP grown by molecular beam epitaxy

AUTHOR(S)
Martin, T.; Stanley, C. R.; Iliadis, A.; Whitehouse, C. R.; Sykes, D. E.
PUB. DATE
May 1985
SOURCE
Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p994
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The properties of InP grown unintentionally doped by molecular beam epitaxy are generally limited by residual free-carrier concentrations (ND-NA)∼1016 cm-3. By combining two depth profiling techniques, secondary ion mass spectrometry and electrochemical capacitance-voltage measurements, the single donor impurity responsible for these high free-electron concentrations has been identified. Conclusive proof is presented which resolves the source of the impurity.
ACCESSION #
9817530

 

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