Hybrid growth of InGaAsP double-channel planar buried heterostructure lasers

Temkin, H.; Panish, M. B.; Logan, R. A.; Abeles, J. H.
May 1985
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p811
Academic Journal
Separate confinement InGaAsP structures grown by gas-source molecular beam epitaxy have been used in conjunction with liquid phase epitaxial regrowth to fabricate high-performance buried heterostructure lasers operating at a wavelength of 1.52-1.55 µm. These lasers show roomtemperature threshold currents as low as 17 mA, external quantum efficiency as high as 27% per facet, and modulation bandwidth of 1.7-2.0 GHz. Single longitudinal mode operation under cw injection can be maintained up to 8 mW.


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