TITLE

Annealing behavior of implanted nitrogen in AISI 316 stainless steel

AUTHOR(S)
Hirvonen, J.; Anttila, A.
PUB. DATE
May 1985
SOURCE
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p835
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The behavior of implanted nitrogen during post-implantation annealing has been studied at 400, 450, and 500 °C by depth profiling of [sup 15]N-implanted samples using the nuclear resonance broadening method. During the initial states of the annealing the nitrogen depth profiles behaved as if all the nitrogen would be able to diffuse, i.e., to be in solution, whereas for the longer annealing times the concentration of migrated nitrogen in the unimplanted region reached equilibrium with the implanted layer. The diffusion coefficients were determined as well as the equilibrium concentrations at the temperatures involved. The published values of the diffusion coefficients were extended to temperatures more than 500 °C lower than before.
ACCESSION #
9817511

 

Related Articles

  • Conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers through selective oxidation. Fu, K.-M. C.; Santori, C.; Barclay, P. E.; Beausoleil, R. G. // Applied Physics Letters;3/22/2010, Vol. 96 Issue 12, p121907 

    The conversion of neutral nitrogen-vacancy centers to negatively charged nitrogen-vacancy centers is demonstrated for centers created by ion implantation and annealing in high-purity diamond. Conversion occurs with surface exposure to an oxygen atmosphere at 465 °C. The spectral properties of...

  • Ion implantation into metals simultaneously irradiated by electrons. Zvonkov, S.; Korshunov, S.; Martynenko, Yu.; Skorlupkin, I. // JETP Letters;Sep2011, Vol. 94 Issue 2, p112 

    It has been revealed that concomitant irradiation by 1-keV electrons changes the depth distributions of the N and C atoms implanted with the energies of 10 and 30 keV in nickel and stainless steel samples. Instead of a single peak, the distribution has two peaks; one peak is closer to the...

  • Effect of Nitrogen Partitioning on Yield Strength in Nitrogen-Alloyed Duplex Stainless Steel During Annealing. Jang, Min-Ho; Moon, Joonoh; Lee, Tae-Ho; Park, Seong-Jun; Han, Heung // Metallurgical & Materials Transactions. Part A;Apr2014, Vol. 45 Issue 4, p1653 

    Nitrogen partitioning and its effect on the yield strength in nitrogen-alloyed duplex stainless steel during annealing were investigated at different annealing temperatures. The decrease in the austenite fraction with an increase in the annealing temperature promoted nitrogen partitioning into...

  • Comparison of pulsed laser and furnace annealing of nitrogen-implanted silicon. Smith, T. P.; Stiles, P. J.; Augustnyiak, W. M.; Brown, W. L.; Hull, R.; Jacobson, D. C.; Kant, R. A. // Journal of Applied Physics;7/1/1985, Vol. 58 Issue 1, p193 

    Presents a study that examinee the pulsed laser and furnace annealing of nitrogen-implanted silicon. Comparison of the liquid and solid phase regrowth; Analysis of the diffusion of nitrogen; Investigation of the formation of nitride.

  • Diamond nitrogen-vacancy centers created by scanning focused helium ion beam and annealing. Huang, Z.; Li, W.-D.; Santori, C.; Acosta, V. M.; Faraon, A.; Ishikawa, T.; Wu, W.; Winston, D.; Williams, R. S.; Beausoleil, R. G. // Applied Physics Letters;8/19/2013, Vol. 103 Issue 8, p081906 

    We demonstrate a method to create nitrogen-vacancy (NV) centers in diamond using focused helium ion microscopy. Near-surface NV centers can be created with spatial resolution below 0.6 μm. We studied the density, creation efficiency, and spectral linewidths at optical and microwave...

  • Annealing of ion implanted gallium nitride. Tan, H. H.; Williams, J. S.; Zou, J.; Cockayne, D. J. H.; Pearton, S. J.; Zolper, J. C.; Stall, R. A. // Applied Physics Letters;3/9/1998, Vol. 72 Issue 10 

    In this paper, we examine Si and Te ion implant damage removal in GaN as a function of implantation dose, and implantation and annealing temperature. Transmission electron microscopy shows that amorphous layers, which can result from high-dose implantation, recrystallize between 800 and 1100...

  • Coalescence of buried CoSi2 layers formed by mesotaxy in Si(111). Hsieh, Yong-Fen; Hull, Robert; White, Alice E.; Short, Kenneth T. // Journal of Applied Physics;12/15/1991, Vol. 70 Issue 12, p7354 

    Examines the evolution of CoSi[sub2] and the fractional variation of A- versus B[sub0,1,2,3]-type precipitates as a function of implantation doses and annealing temperatures. Experimental details; Microstructure of arsenic-implanted and annealed samples.

  • Extended defects in shallow implants. Claverie, A.; Colombeau, B.; de Mauduit, B.; Bonafos, C.; Hebras, X.; Ben Assayag, G.; Cristiano, F. // Applied Physics A: Materials Science & Processing;2003, Vol. 76 Issue 7, p1025 

    Extended defects are often found after ion implantation and annealing of silicon and they are known to affect dopant diffusion. The article reviews the structure and energetics of the most often found extended defects and describes the mechanisms by which all these defects grow in size and...

  • Reduction of tritium permeation through 304L stainless steel using aluminum ion implantation. Maienschein, J. L.; Musket, R. G.; McMurphy, F. E.; Brown, D. W. // Applied Physics Letters;4/6/1987, Vol. 50 Issue 14, p940 

    We have demonstrated the reduction of tritium gas permeation through 304L stainless steel using aluminum ion implantation. The implanted aluminum was selectively oxidized to form a thin, coherent, and stable Al2O3-rich layer on the stainless-steel surface. Tritium permeability at 100 and 170...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics