TITLE

Electronic structure and dynamics of thin Ge/GaAs(110) heterostructures

AUTHOR(S)
Haight, R.; Silberman, J. A.
PUB. DATE
October 1990
SOURCE
Applied Physics Letters;10/8/1990, Vol. 57 Issue 15, p1548
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using angle-resolved picosecond laser photoemission we have investigated both occupied and transiently excited empty states at the surface of Ge grown epitaxially on GaAs(110). We observe a normally unoccupied, Ge layer derived state whose separation from the valence-band maximum of the system is 700±50 meV at six monolayers Ge coverage. The evolution of the electronic structure is followed as a function of coverage and correlated with low-energy electron diffraction. The time dependence of the transiently occupied Ge signal is compared with that of the clean GaAs(110) surface and shows that electrons are prevented from diffusing into the GaAs bulk by the conduction-band offset of 330±40 meV.
ACCESSION #
9817510

 

Related Articles

  • Femtosecond pulse evolution in GaAs crystal. Kumar, J.; Sen, Pratima // Journal of Applied Physics;2/1/2000, Vol. 87 Issue 3, p1049 

    Presents information on a study which investigated the evolution of an ultrashort pulse having frequency spectrum above the band edge in a sample of gallium arsenide crystal. Pulse evolution equation; Model of the semiconductor medium; Results and discussion; Conclusions.

  • Absolute-phase phenomena in photoionization with few-cycle laser pulses. Paulus, G.G.; Grasbon, F.; Walther, H.; Villoresi, P.; Nisoli, M.; Stagira, S.; Priori, E.; De Silvestri, S. // Nature;11/8/2001, Vol. 414 Issue 6860, p182 

    Focuses on the effect of short laser pulse on the emission of photoelectrons. Dependence of the variation of electric field on the phase of carrier frequency; Significance of absolute phase for nonlinear processes; Ionization of atoms by a short laser pulse.

  • The forward biased junction: a sensitive detector for far-infrared radiation. Saenz, M. Lopez; Perez, J.M. Guerra // Applied Physics Letters;1/29/1996, Vol. 68 Issue 5, p675 

    Examines the irradiation of germanium junctions by far-infrared laser pulses. Comparison between the electrical and optical response of reverse and small forward bias; Use of two channel fast digitizer to record the input and output of electrical pulses; Effect of lattice temperature on the...

  • Optical switching in a resonant tunneling structure. England, P.; Golub, J.E.; Florez, L.T.; Harbison, J.P. // Applied Physics Letters;3/4/1991, Vol. 58 Issue 9, p887 

    Describes the interaction of light pulses with a gallium arsenide/aluminum arsenide resonant tunneling structure. Demonstration that light with an average power of less than 10 microwatts can induce switching; Change in the optical absorption; Potential applications for the resonant tunneling...

  • Distribution of Electrons between Valleys and Band-Gap Narrowing at Picosecond Superluminescence in GaAs. Ageeva, N. N.; Bronevoı, I. L.; Krivonosov, A. N. // Semiconductors;Jan2001, Vol. 35 Issue 1, p67 

    Band-gap narrowing due to photogeneration of dense hot electron-hole plasma in GaAs was studied. Plasma was generated by picosecond light pulses, and picosecond superluminescence was observed. In this case, the total concentration of photogenerated electron-hole pairs was experimentally proved...

  • Measurement of femtosecond electron bunches from metal photocathodes. Tsang, T. // Applied Physics Letters;8/16/1993, Vol. 63 Issue 7, p871 

    Presents a technique for generating and detecting subpicosecond electron pulse duration from metal photocathodes. Use of multiphoton photoemission to measure the pulses; Liberation of electrons from metals by higher-order femtosecond optical soliton pulses; Accuracy of the electron temporal shape.

  • Coherent control of cyclotron emission from a semiconductor using sub-picosecond electric field.... Huggard, P.G.; Cluff, J.A. // Applied Physics Letters;11/3/1997, Vol. 71 Issue 18, p2647 

    Demonstrates the excitation and coherent control of cyclotron emission from a semiconductor using subpicosecond electric field pulses. Source of the terahertz radiation; Use of a gallium arsenide/aluminum gallium arsenide two-dimensional electron gas; Factors responsible for the changes in...

  • Intense electron emission due to picosecond laser-produced plasmas in high gradient electric fields. Wang, X. J.; Tsang, T.; Kirk, H.; Srinivasan-Rao, T.; Fischer, J.; Batchelor, K.; Russell, P.; Fernow, R. C. // Journal of Applied Physics;8/1/1992, Vol. 72 Issue 3, p888 

    Presents a study that examined laser-induced plasma production using intense nanosecond laser pulses. Processes of laser-induced plasma and electron formation; Importance of large electron emission in photoemission; Similarities between intense electron emission and explosive electron emission...

  • Time-resolved thermionic and photoemission from nanosecond, pulsed laser excited germanium and silicon. Leung, T. L. F.; van Driel, H. M. // Applied Physics Letters;1984, Vol. 45 Issue 6, p683 

    We report electron emission from (111) surfaces of intrinsic crystalline Ge and Si using 25-ns laser pulses at λ=1.06, 0.53, 0.35, and 0.26 μm. For 0.26 and 0.35 μm, two-photon photoemission is observed, while for 0.53 and 1.06 μm only thermionic emission is obtained. In all cases...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics