TITLE

Effects of Be and Si on disordering of the AlAs/GaAs superlattice

AUTHOR(S)
Kawabe, Mitsuo; Shimizu, Norisato; Hasegawa, Fumio; Nannichi, Yasuo
PUB. DATE
May 1985
SOURCE
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p849
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Effects of Be doping and the interaction of Be and Si on the disordering of 15-nm AlAs/15-nm GaAs superlattices were studied. Be doping of more than 4 × l0[sup 19] cm[sup -3] causes the intermixing of A1 and Ga during epitaxial growth and the effect of Be surface accumulation is observed at the growth temperature of 540 °C, while after incorporation of Be in the crystal the annealing of 750 °C, 2 h does not cause any remarkable change in the superlattice structure. Be doping in the Sidoped superlattice shows remarkable suppression of the disordering of superlattice when the Be doping level exceeds that of Si.
ACCESSION #
9817501

 

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