TITLE

High-performance photovoltaic infrared devices in Hg1-xCdxTe on GaAs

AUTHOR(S)
Gertner, E. R.; Shin, S. H.; Edwall, D. D.; Bubulac, L. O.; Lo, D. S.; Tennant, W. E.
PUB. DATE
May 1985
SOURCE
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p851
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A combination of organometallic and isothermal vapor phase epitaxy was used sequentially to grow CdTe and Hg[sub 1-x]Cd[sub x] Te on GaAs substrates. Photodiodes in the Hg[sub 1-x] Cd[sub x]Te show properties comparable to the best Hg[sub 1-x]Cd[sub x] Te grown by liquid phase epitaxy. Resistance-area products were ≥10[sup 7] ω cm[sup 2] and >10[sup 4]ω cm[sup 2] at 77 K for Hg[sub 1-x]Cd[sub x] Te with cut-offwavelength of 3.73 and 5.54 µm at 77 K, respectively. The backside-illuminated spectral response was broadband with peak external quantum efficiencies typically >50% (without antireflection coating).
ACCESSION #
9817498

 

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