Sintered n-CuInSe2/Au Schottky diode

Leccabue, F.; Seuret, D.; Vigil, O.
May 1985
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p853
Academic Journal
Rectifying CuInSe[sub 2]/Au contacts were prepared by a vacuum evaporation of Au on n-type sintered CuInSe[sub 2] samples in order to evaluate the electro-optical properties of these devices. The low photovoltaic efficiency of the diode is due to the presence of the insulating layer, surface states, and high series resistance. A good quantum efficiency of about 60% in the 0.72-1.24-µm range has been obtained.


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