Impurity-disordered, coupled-stripe AlxGa1-xAs-GaAs quantum well laser

Gavrilovic, P.; Meehan, K.; Epler, J. E.; Holonyak, N.; Burnham, R. D.; Thornton, R. L.; Streifer, W.
May 1985
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p857
Academic Journal
Continuous room-temperature operation of impurity-disordered, coupled-stripe Al[sub x]Ga[sub 1-x]As-GaAs quantum well heterostructure lasers is described. Silicon (donor) diffusion at 850 °C is used to produce layer disordering and index guiding, in addition to providing carrier confinement in a ten-stripe coupled array (8-µm-wide stripes on 10-µm centers).


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