High resolution electron microscope study of epitaxial CdTe-GaAs interfaces

Otsuka, N.; Kolodziejski, L. A.; Gunshor, R. L.; Datta, S.; Bicknell, R. N.; Schetzina, J. F.
May 1985
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p860
Academic Journal
CdTe films have been grown on (100) GaAs substrates with two different epitaxial relations: (111)CdTe(100)GaAs and (100)CdTe(100)GaAs. High resolution electron microscope observation of these two types of interfaces was carried out in order to investigate the role of the substrate surface microstructure in determining which type of epitaxy occurs. The interface of the former type shows a direct contact between the CdTe and GaAs crystals, while the interface of the latter type has a very thin layer (˜10 Å in thickness), which is most likely an oxide, between the two crystals. These observations suggest that the GaAs substrate preheating cycle prior to CdTe film growth is crucial in determining which type of epitaxy occurs in this system.


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