Silicon-on-insulator by oxygen implantation with a stationary beam

Mogro-Campero, A.; Love, R. P.; Lewis, N.; Hall, E. L.
May 1985
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p862
Academic Journal
A single crystal silicon layer on top of a buried oxide has been achieved by implanting oxygen ions of 180 keV into a silicon substrate. A stationary beam and wafer scanning were used, with a dose of 2.4 × 10[sup 18] cm[sup - 2]. Similar structures produced by ion beam scanning have been reported previously where scanning rates are sufficiently high to maintain a constant temperature profile during the implantation process. In high current implanters, a stationary beam is often used, and the wafer is scanned instead. The slower scanning rates in the latter process can result in severe temperature cycling during implantation. This was the case in the present investigation. Nevertheless, as determined by transmission electron microscopy, the as-implanted material in this work is similar to that reported when ion beam scanning is used.


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