TITLE

Ytterbium-doped InP light-emitting diode at 1.0 μm

AUTHOR(S)
Haydl, W. H.; Müller, H. D.; Ennen, H.; Körber, W.; Benz, K. W.
PUB. DATE
May 1985
SOURCE
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p870
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Light-emitting pn junction diodes have been realized in ytterbium-doped InP. The p-type epitaxial layers, which contained the dopant ytterbium (Yb), were grown by liquid phase epitaxy on (100) oriented n[sup +]-type InP substrates. Ohmic contacts were alloyed, and the diodes biased in forward direction. At 77 K, emissions were observed at 1.38 eV (0.90 µm) and 1.24 eV (1.00 µm) due to near band-edge electron hole recombination and transitions between the spin-orbit levels ²F[sub &frac52;]←²F[sub &frac72;] of Yb[sup 3+] (4f[sup 13]), respectively. The dependence of the electroluminescence intensity with applied voltage is presented. The external quantum efficiency was determined to be 8 × 10[sup -4] at 77 K.
ACCESSION #
9817485

 

Related Articles

  • Apparatus for minority-carrier lifetime measurements on light-emitting devices. Kot, Miroslav // Review of Scientific Instruments;May93, Vol. 64 Issue 5, p1268 

    The experimental setup has been designed that allows measurements of the minority-carrier lifetime versus drive current in InGaAsP/InP LEDs. The small-signal technique has been used to obtain the lifetime data and a special averaging system has been built for measurements at very low injection...

  • Electroluminescence from Er-doped GaP. Wang, X.Z.; Wessels, B.W. // Applied Physics Letters;8/1/1994, Vol. 65 Issue 5, p584 

    Investigates the electroluminescent properties of erbium (Er)-doped gallium phosphide light-emitting diodes. Preparation of the diodes by metalorganic vapor phase epitaxy and diffusion; Characteristics of the Er[sup 3+] intra-4f-shell emission; Correlation between electroluminescence intensity...

  • Laterally doped heterostructures for III–N lasing devices. Komirenko, S. M.; Kim, K. W.; Kochelap, V. A.; Zavada, J. M. // Applied Physics Letters;12/9/2002, Vol. 81 Issue 24, p4616 

    To achieve a high-density electron-hole plasma in group-III nitrides for efficient light emission, we propose a planar two-dimensional (2D) p-i-n structure that can be formed in the quantum well layers due to efficient activation of donors and acceptors in the laterally, selectively doped...

  • High-efficiency yellow double-doped organic light-emitting devices based on phosphor-sensitized fluorescence. D’Andrade, Brian W.; Baldo, Marc A.; Adachi, Chihaya; Brooks, Jason; Thompson, Mark E.; Forrest, Stephen R. // Applied Physics Letters;8/13/2001, Vol. 79 Issue 7 

    We demonstrate high-efficiency yellow organic light-emitting devices (OLEDs) employing [2-methyl-6-[2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene] propane-dinitrile (DCM2) as a fluorescent lumophore, with a green electrophospho- rescent sensitizer, fac...

  • Structural properties of undoped and doped cubic GaN grown on SiC(001). Martinez-Guerrero, E.; Bellet-Amalric, E.; Martinet, L.; Feuillet, G.; Daudin, B.; Mariette, H.; Holliger, P.; Dubois, C.; Bru-Chevallier, C.; Nze, P. Aboughe; Chassagne, T.; Ferro, G.; Monteil, Y. // Journal of Applied Physics;4/15/2002, Vol. 91 Issue 8, p4983 

    Transmission electron microscopy and x-ray diffraction measurements reveal the presence of stacking faults (SFs) in undoped cubic GaN thin layers. We demonstrate the importance of the defects in the interfacial region of the films by showing that the SFs act as nucleation sites for precipitates...

  • Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices. Xiangfeng Duan; Yu Huang; Yi Cui; Jianfang Wang; Lieber, Charles M. // Nature;1/4/2001, Vol. 409 Issue 6816, p66 

    Reports the assembly of functional nanoscale devices from indium phosphide nanowires, the electrical properties of which are controlled by selective doping. Indication that the nanowires can be synthesized as either n- or p-type; Function as nanoscale field-effect transistors; P-n junctions...

  • 660 nm In0.5Ga0.5P light-emitting diodes on Si substrates. Kondo, Susumu; Matsumoto, Shin-ichi; Nagai, Haruo // Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p279 

    In0.5Ga0.5P light-emitting diodes (LED’s) that operate in the 660 nm region were fabricated on Si substrates using GaAs buffer layers. InGaP layers were grown by metalorganic-chloride vapor phase epitaxy (MO-chloride VPE), and GaAs layers were grown by metalorganic vapor phase epitaxy...

  • Self-aligned buried-heterostructure lasers grown entirely by metalorganic vapor phase epitaxy. Kondo, Y.; Sato, K.; Yamamoto, M. // Applied Physics Letters;3/15/1993, Vol. 62 Issue 11, p1188 

    Investigates the effects of neutron-type dopant on indium phosphide (InP) embedding regrowth by metalorganic vapor phase epitaxy (MOVPE). Suppression of growth in the InP layer under certain selenide conditions; Fabrication of heterostructure laser diode using MOVPE technique; Level of threshold...

  • Stoichiometry-dependent deep levels in p-type InP. Nishizawa, Jun-ichi; Kim, Kiyoon; Oyama, Yutaka; Suto, Ken // Journal of Applied Physics;4/1/1997, Vol. 81 Issue 7, p3151 

    Examines the stoichiometry-dependent deep levels in p-type indium phosphide crystals doped with zinc involving photocapacitance measurement. Level density and energy levels; Ion density; Optical transition mechanism.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics