Si/SiO2 interface roughness: Structural observations and electrical consequences

Carim, A. H.; Bhattacharyya, Anjan
May 1985
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p872
Academic Journal
Thin oxides (on the order of 80-90 Å) grown at 900 °C in dry O[sub 2] diluted with Ar were examined in cross section by high-resolution transmission electron microscopy. Varying degrees of roughness at the substrate/oxide interface were observed, depending on the processing sequence employed. Nonuniformity of the interface was found to correlate with undesirable electrical characteristics. By adding an intermediate annealing step to the oxidation process, the quality of the film was greatly improved. A qualitative model for the observed behavior based on stress effects and viscous flow considerations is presented.


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