High field electron transport in n-InP/GaInAs two-dimensional electron gas

Tsubaki, Kotaro; Fukui, Takashi; Saito, Hisao
May 1985
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p875
Academic Journal
High field electron transport in n-InP/GalnAs two-dimensional electron gas (2DEG) is studied at liquid helium temperature. In this experiment two kinds of samples are used: the first has a thick enough GaInAs layer to contain a three-dimensional gas; the other has a thin GaInAs layer containing only a 2DEG on the GaInAs side of the heterojunction, In the sample with the thick GaInAs layer, Gunn oscillations are observed above 2.2 kV/cm. In the sample with the thin GaInAs layer, Gunn oscillations do not occur and an irreversible decrease of the sheet concentration of 2DEG is obtained after applying a high electric field. The highest measured drift velocity of this sample is 4.4 × 10[sup 7] cm/s at 3.8 kV/cm.


Related Articles

  • Linewidth-narrowed distributed feedback injection lasers with long cavity length and detuned Bragg wavelength. Liou, K.-Y.; Dutta, N. K.; Burrus, C. A. // Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p489 

    We report linewidth narrowing for 1.3-μm InGaAsP distributed feedback lasers with either a long cavity length or a detuned Bragg wavelength. The narrowest linewidth measured was 3 MHz at 6 mW for a 780-μm long-cavity laser, and was 8 MHz at 5.5 mW for a 250-μm regular-length laser with...

  • Zn-diffusion-induced intermixing of InGaAs/InP multiple quantum well structures. Nakashima, Kiichi; Kawaguchi, Yoshihiro; Kawamura, Yuichi; Imamura, Yoshihiro; Asahi, Hajime // Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1383 

    The intermixing process of InGaAs/InP multiple quantum well structures by Zn diffusion at 550 °C is investigated. Secondary ion mass spectroscopy and x-ray analysis reveal that Zn diffusion induces the intermixing of group III atoms, but has little effect on group V profiles. However,...

  • Direct observation of effective mass filtering in InGaAs/InP superlattices. Lang, D. V.; Sergent, A. M.; Panish, M. B.; Temkin, H. // Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p812 

    By making transport measurements on InGaAs/InP superlattices we have been able to demonstrate a regime of rapid electron tunneling perpendicular to the layers in the presence of quantum hole localization, i.e., effective mass filtering. The experiments were conducted on multiple quantum well and...

  • Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wires. Maile, B. E.; Forchel, A.; Germann, R.; Grützmacher, D. // Applied Physics Letters;4/17/1989, Vol. 54 Issue 16, p1552 

    We have investigated the lateral width (Lx) dependence of the quantum efficiency of the excitonic recombination in etched InGaAs/InP wires (40 nm≤Lx≤5 μm). The analysis of data obtained at different temperatures implies that the intensity decay observed for narrow wires is due to...

  • Self-organized InP islands on (100) GaAs by metalorganic vapor phase epitaxy. Sopanen, M.; Lipsanen, H. // Applied Physics Letters;12/18/1995, Vol. 67 Issue 25, p3768 

    Examines the growth of indium phosphide islands on (100) gallium arsenide by metalorganic vapor phase epitaxy. Effect of the growth temperature and substrate misorientation angle on island uniformity and size; Dependence of the island density on growth temperature; Relationship between the...

  • Room-temperature photopumped operation of an InGaAs-InP vertical cavity surface-emitting laser. Deppe, D. G.; Singh, S.; Dupuis, R. D.; Gerrard, N. D.; Zydzik, G. J.; van der Ziel, J. P.; Green, C. A.; Pinzone, C. J. // Applied Physics Letters;5/28/1990, Vol. 56 Issue 22, p2172 

    Data are presented demonstrating the room-temperature operation of an InP-InGaAs vertical cavity surface-emitting laser. The laser structure has an active region consisting of a 2-μm-thick bulk InGaAs layer and has an emission wavelength of 1.65 μm. Both the front and rear mirrors consist...

  • Metalorganic vapor phase epitaxial growth of high quality InGaAs on InP using tertiarybutylarsine. Abdalla, M. I.; Kenneson, D. G.; Powazinik, W.; Koteles, E. S. // Applied Physics Letters;7/30/1990, Vol. 57 Issue 5, p494 

    We report the growth by low-pressure metalorganic vapor phase epitaxy of lattice-matched InGaAs on InP substrates using tertiarybutylarsine as the arsenic source. The grown layers are uniform in composition and are consistently n type with low background carrier concentrations...

  • Electron Transport and Terahertz Radiation Detection in Submicrometer-Sized GaAs/AlGaAs Field-Effect Transistors with Two-Dimensional Electron Gas. Antonov, A.V.; Gavrilenko, V.I.; Demidov, E.V.; Morozov, S.V.; Dubinov, A.A.; Lusakowski, J.; Knap, W.; Dyakonova, N.; Kaminska, E.; Piotrowska, A.; Golaszewska, K.; Shur, M.S. // Physics of the Solid State;Jan2004, Vol. 46 Issue 1, p146 

    The electronic transport and response in the terahertz range are studied in field-effect GaAs/AlGaAs transistors with a two-dimensional high-mobility electron gas. The special interest expressed in such transistors stems from the possibility of developing terahertz-range radiation detectors and...

  • Effect of a GaAs buffer layer grown at low substrate temperatures on a high-electron-mobility modulation-doped two-dimensional electron gas. Melloch, M. R.; Miller, D. C.; Das, B. // Applied Physics Letters;3/6/1989, Vol. 54 Issue 10, p943 

    Sidegating in GaAs integrated circuits can be eliminated in molecular beam epitaxially grown structure with the incorporation of a GaAs buffer layer grown at low substrate temperatures (200–300 °C). We have grown two films which were identical except one had the low-temperature buffer...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics