Depletion and enhancement mode In0.53Ga0.47As/InP junction field-effect transistor with a p+-InGaAs confinement layer

Cheng, Julian; Forrest, S. R.; Stall, R.; Guth, G.; Wunder, R.
May 1985
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p885
Academic Journal
A self-aligned all-In[sub 0.53] Ga[sub 0.47] As junction field-effect transistor structure grown by molecular beam epitaxy is described, using p[sup +]-InGaAs as the confinement layer for the n channel. Devices have been made to operate in either the depletion mode or the enhancement mode. Transconductances of 90 mS/mm have been observed, with low capacitance (0.7 pF/mm) and low gate leakage.


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