Structure of the InP/SiO2 interface

Liliental, Z.; Krivanek, O. L.; Wager, J. F.; Goodnick, S. M.
May 1985
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p889
Academic Journal
InP/SiO[sub 2] interfaces have been studied by high resolution electron microscopy in cross section, by ellipsometry, and by x-ray photoelectron spectroscopy. The roughness of the interface is shown to vary from 10 to 100 A peak to peak depending on the InP surface treatment prior to SiO[sub 2] deposition, and some evidence is found for a small amount of native oxide and P segregation at the interface. Thermal oxide grown on InP at 350 &dec;C is shown to consist of two separate layers, an inner one of 30-70 Ã… thickness and probably composition InPO[sub 4], and an outer one of 60-Ã… thickness and probably composition In[sub 2]O[sub 3].


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