Growth of single crystal NiSi2 layers on Si (110)

Tung, R. T.; Nakahara, S.; Boone, T.
May 1985
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p895
Academic Journal
Growth of single crystal nickel silicide layers on Si (110) under ultrahigh vacuum conditions is demonstrated. Formation of thin templates followed by deposition of nickel at ˜650 °C produced NiSi[sub 2] layers with Χ[sub min] = 3%. Low-energy electron diffraction revealed unreconstructed silicide surfaces. Transmission electron microscopy showed the entire silicide-silicon interface to consist of {111} type inclined facets. Long and straight dislocations were observed at facet boundaries with Burgers' vectors of ¼〉111〈 type. The usual ½ 〉110〈 type misfit dislocations were also found on inclined facets.


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