TITLE

Growth of single crystal NiSi2 layers on Si (110)

AUTHOR(S)
Tung, R. T.; Nakahara, S.; Boone, T.
PUB. DATE
May 1985
SOURCE
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p895
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Growth of single crystal nickel silicide layers on Si (110) under ultrahigh vacuum conditions is demonstrated. Formation of thin templates followed by deposition of nickel at ˜650 °C produced NiSi[sub 2] layers with Χ[sub min] = 3%. Low-energy electron diffraction revealed unreconstructed silicide surfaces. Transmission electron microscopy showed the entire silicide-silicon interface to consist of {111} type inclined facets. Long and straight dislocations were observed at facet boundaries with Burgers' vectors of ¼〉111〈 type. The usual ½ 〉110〈 type misfit dislocations were also found on inclined facets.
ACCESSION #
9817468

 

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