Detection of alignment signals for focused ion beam lithography

Morimoto, H.; Sasaki, Y.; Onoda, H.; Kato, T.
May 1985
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p898
Academic Journal
A detector and the output signal waveforms to be used for alignment in focused ion beam lithography are discussed. It is shown that a microchannelplate (MCP) is suitable for alignment signal detection. Alignment signals for 200-keV Si, 200-keV Be, and 100-keV Au ion beams are studied using the MCP. No deformation of alignment marks is observed in the case of light ions such as Si or Be. As a result, it is demonstrated that alignment can potentially be performed by detecting secondary electrons from the marks.


Related Articles

  • ALG steps up ion beam lithography R&D. Berger, Jeffrey // Electronic News;12/4/95, Vol. 41 Issue 2094, p64 

    Declares that the Advanced Lithography Group (ALG) is seeking to produce research and development (R&D) results for ion beam lithography. Diagram of the prototype ALG-1000.

  • H- beam based projection microlithography: A conceptual study of the beam parametersa). Guharay, S. K.; Reiser, M.; Dudnikov, V. G. // Review of Scientific Instruments;May94, Vol. 65 Issue 5, p1745 

    The current trends of research and development work in ion-beam microlithography are examined with particular emphasis on the choice of ion sources and the beam parameters. The common approach with duoplasmatron-type ion sources for projection ion-beam lithography is revisited, and the...

  • MEDEA's lithography project.  // Solid State Technology;Mar98, Vol. 41 Issue 3, pS3 

    Focuses on the ion-projection lithography (IPL) project under Europe's MEDEA project. Funding from the governments of Austria, Germany and the Netherlands; Participating companies; Other technologies to be explored under the project.

  • High-resolution focused ion beam lithography. Matsui, Shinji; Kojima, Yoshikatsu; Ochiai, Yukinori // Applied Physics Letters;9/5/1988, Vol. 53 Issue 10, p868 

    The resolution of focused ion beam (FIB) lithography has been studied by proximity effect measurement and fine pattern fabrication. In the proximity effect measurement, a 0.1 μm line pattern, according to the gap between square and line patterns, could be achieved. Moreover, 0.1 μm line...

  • Microfabrication below 10 nm. Van der Gaag, B. P.; Scherer, A. // Applied Physics Letters;1/29/90, Vol. 56 Issue 5, p481 

    We describe a new method of producing ultrasmall structures on thick substrates with electron beam lithography. Using an innovative exposure technique, we obtain features with lateral sizes smaller than the incident beam diameter. These patterns are transferred into GaAs/AlGaAs quantum well...

  • Micrion $60M FIB order to double its yearly sales.  // Electronic News;3/25/96, Vol. 42 Issue 2109, p60 

    Reports on the $60 million order placed for Micrion's focused ion beam (FIB) systems, which will more than double its yearly sales. Micrion's refusal to name the client for the order; Outlook for the company with the order; Background on Micrion's FIB technology.

  • Focused ion beam mask repair. Morgan, John C. // Solid State Technology;Mar98, Vol. 41 Issue 3, p61 

    Discusses mask defect repair using focused ion beam (FIB) technologies. Chrome masks; Embedded shifter masks; Alternative aperture masks; Optical proximity corrections (OPC) masks; Requirements of FIB repair for the next generations of lithography.

  • Structured doping with light forces. Schulze, Th.; Mu¨ther, T.; Ju¨rgens, D.; Brezger, B.; Oberthaler, M. K.; Pfau, T.; Mlynek, J. // Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1781 

    Light forces are a powerful tool for neutral atom manipulation and have been used previously to focus an atomic beam onto a substrate to create periodic nanostructures. We utilize the material-selective characteristic of the atom-light interaction to structure the material composition of a film...

  • Focused ion beam nanolithography on AlF[sub 3] at a 10 nm scale. Gierak, J.; Vieu, C. // Applied Physics Letters;4/14/1997, Vol. 70 Issue 15, p2049 

    Investigates the use of aluminum fluorate thin films as negative inorganic resist layers for focused ion beam nanolithography. Fabrication of a ten nanometer-wide lines using a gallium beam; Comparison of the resist sensitivity of gallium to polymethylmethacrylate; Effect of low sensitivity on...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics