([Square_Root]3×[Square_Root]3)B structure on a (5×5)GexSi1-x/Si (111) surface

Tatsumi, T.; Hirosawa, I.; Niino, T.; Hirayama, H.; Mizuki, J.
October 1990
Applied Physics Letters;10/1/1990, Vol. 57 Issue 14, p1395
Academic Journal
A ([Square_Root]3×[Square_Root]3)B structure was found to be formed on a (5×5) GexSi1-x/Si (111) surface on which Ga or Sn atoms did not form any superstructures. The critical B coverage at which a (7×7) pattern disappeared and only a ([Square_Root]3×[Square_Root]3) pattern was visible increased as the fraction (x) of Ge in the substrate layer increased. A Si epitaxial overlayer was grown on the ([Square_Root]3×[Square_Root]3)B/50 Å Ge0.4Si0.6/Si (111) structure at a growth temperature of 300 °C. The observed (-2/3,4/3) reflection intensity in grazing x-ray diffraction was 50 times larger than that of a Si epitaxial layer grown on a ([Square_Root]3×[Square_Root]3)B/Si (111) structure under the same condition. On a GexSi1-x substrate, the B([Square_Root]3×[Square_Root]3) structure is well preserved at the interface probably because of relief of the interface strain that results from the small size of the boron atom.


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