Asymmetric quantum well electron barrier diode

Kirchoefer, S. W.; Newman, H. S.; Comas, J.
May 1985
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p855
Academic Journal
A new rectifying diode is proposed whose asymmetric current versus voltage characteristic originates from the ground state energies in an asymmetric sequence of quantum wells. Data are presented on devices fabricated from samples of this proposed structure grown by molecular beam epitaxy. These diodes exhibit current versus voltage temperature dependence and reverse bias capacitance which are different from other types of electron barrier devices.


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