TITLE

Asymmetric quantum well electron barrier diode

AUTHOR(S)
Kirchoefer, S. W.; Newman, H. S.; Comas, J.
PUB. DATE
May 1985
SOURCE
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p855
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new rectifying diode is proposed whose asymmetric current versus voltage characteristic originates from the ground state energies in an asymmetric sequence of quantum wells. Data are presented on devices fabricated from samples of this proposed structure grown by molecular beam epitaxy. These diodes exhibit current versus voltage temperature dependence and reverse bias capacitance which are different from other types of electron barrier devices.
ACCESSION #
9817449

 

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