Disordering of Ga1-xAlxAs-GaAs quantum well structures by donor sulfur diffusion

Rao, E. V. K.; Thibierge, H.; Brillouet, F.; Alexandre, F.; Azoulay, R.
May 1985
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p867
Academic Journal
We show here, for the first time, that disordering (alloy mixing) on group III sublattice of GaAIAs-GaAs quantum well (QW) structures can be accomplished by the introduction ora group V site substitutional donor impurity. This is achieved by performing donor sulfur diffusions at 850 °C (for varied durations 1 to 14 h) under open-tube conditions in molecular beam epitaxy as well as metalorganic chemical vapor deposition grown GaAIAs-GaAs QW structures. Using simple photoluminescence measurements at room temperature, we provide relevant evidence that the degree of alloy mixing (and so the resulting Al composition) is dependent on the diffused S concentration.


Related Articles

  • Photoluminescence study of interdiffusion in In[sub 0.53]Ga[sub 0.47]As/InP surface quantum wells. Oshinowo, J.; Forchel, A.; Grutzmacher, D.; Stollenwerk, M.; Heuken, M.; Heime, K. // Applied Physics Letters;5/25/1992, Vol. 60 Issue 21, p2660 

    Investigates the thermal stability and interdiffusion of InGaAs/InP surface quantum wells. Achievement of well-defined photoluminescence emission spectra; Observation of strong emission energy shift; Estimation of interdiffusion coefficient.

  • Improvement of the carrier confinement by double-barrier GaAs/AlAs/(Al,Ga)As quantum well... Neu, G.; Chen, Y.; Deparis, C.; Massies, J. // Applied Physics Letters;5/13/1991, Vol. 58 Issue 19, p2111 

    Discusses an improvement of the carrier confinement by double-barrier GaAs/AlAs/(Al,Ga)As quantum well structures. Novel approach for the control of electronic levels; Optical measurements; Observed emission peal energies; Calculated exciton transitions; Role played by the AlAs interface layer...

  • Long range disordering of GaAs-AlGaAs multiquantum wells by isoelectronic antimony implants. Rao, E.V.K.; Juhel, M.; Krauz, Ph.; Gao, Y.; Thibierge, H. // Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2096 

    Demonstrates GaAs-AlGaAs multiquantum wells (MQW) long range disordering through isoelectronic antimony implants. Implant damage in GaAs-AlGaAs MQW; Use of secondary ion mass and photoluminescence spectroscopy in monitoring the disordering; Defects of the implantation process and annealing...

  • First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum well. West, L. C.; Eglash, S. J. // Applied Physics Letters;6/15/1985, Vol. 46 Issue 12, p1156 

    A new type of optical transition in GaAs quantum wells has been observed. The dipole occurs between two envelope states of the conduction-band electron wave function, and is called a quantum well envelope state transition (QWEST). The QWEST is observed by infrared absorption for two structures...

  • Transmission electron microscopy and photoluminescence study of silicon and boron ion implanted GaAs/GaAlAs quantum wells. Arakawa, Y.; Smith, J. S.; Yariv, A.; Otsuka, N.; Choi, C.; Gu, B. P.; Venkatesan, T. // Applied Physics Letters;1/12/1987, Vol. 50 Issue 2, p92 

    Transmission electron microscopy (TEM) and photoluminescence (PL) data are presented on GaAs/Ga0.25Al0.75As quantum well (QW) structures grown by molecular beam epitaxy which were implanted with B ions and Si ions, respectively, to a dose of 1015 cm-2. TEM observations reveal that significant...

  • In situ laser patterned desorption of GaAs quantum wells for monolithic multiple wavelength diode lasers. Epler, J. E.; Treat, D. W.; Chung, H. F.; Tjoe, T.; Paoli, T. L. // Applied Physics Letters;3/6/1989, Vol. 54 Issue 10, p881 

    A new laser-assisted crystal growth technique that enables three-dimensional patterning of the GaAs quantum well (QW) active layer within a laser diode structure is demonstrated. In this technique, the GaAs QW is locally heated with superimposed Ar+ and Nd:YAG laser beams during a pause in the...

  • External-beam switching in monolithic bistable GaAs quantum well étalons. Sfez, B. G.; Oudar, J. L.; Michel, J. C.; Kuszelewicz, R.; Azoulay, R. // Applied Physics Letters;10/29/1990, Vol. 57 Issue 18, p1849 

    Monolithic bistable étalons with a GaAs/Al0.3Ga0.7As multiple quantum well active layer and AlAs/Al0.1Ga0.9As Bragg reflectors have been fabricated by metalorganic vapor phase epitaxy. They exhibit a very good memory effect. Experiments with an additional external beam at the same and at a...

  • Electron beam irradiation enhancement of Al-Ga interdiffusion at GaAs/AlGaAs quantum well interfaces. Li, Y. J.; Tsuchiya, M.; Petroff, P. M. // Applied Physics Letters;7/30/1990, Vol. 57 Issue 5, p472 

    The effect of room-temperature electron beam irradiation on the Al-Ga interdiffusion at GaAs/AlGaAs quantum well heterointerfaces is investigated with low-temperature cathodoluminescence spectroscopy. The interdiffusion is enhanced by defects generated through an irradiation with a 400 keV...

  • Properties of Exciton States in GaAs/AlGaAs Quantum Wells in the Presence of a Quasi-Two-Dimensional Electron Gas. Kulakovskiı, D. V.; Gubarev, S. I.; Lozovik, Yu. E. // Journal of Experimental & Theoretical Physics;Apr2002, Vol. 94 Issue 4, p785 

    The changes in binding energy and oscillator strength of the exciton state due to the screening by a quasi-two-dimensional electron gas are calculated self-consistently in the approximation of noninteracting electrons and in the local field approximation. It is shown that the collapse of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics