TITLE

Disordering of Ga1-xAlxAs-GaAs quantum well structures by donor sulfur diffusion

AUTHOR(S)
Rao, E. V. K.; Thibierge, H.; Brillouet, F.; Alexandre, F.; Azoulay, R.
PUB. DATE
May 1985
SOURCE
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p867
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We show here, for the first time, that disordering (alloy mixing) on group III sublattice of GaAIAs-GaAs quantum well (QW) structures can be accomplished by the introduction ora group V site substitutional donor impurity. This is achieved by performing donor sulfur diffusions at 850 °C (for varied durations 1 to 14 h) under open-tube conditions in molecular beam epitaxy as well as metalorganic chemical vapor deposition grown GaAIAs-GaAs QW structures. Using simple photoluminescence measurements at room temperature, we provide relevant evidence that the degree of alloy mixing (and so the resulting Al composition) is dependent on the diffused S concentration.
ACCESSION #
9817445

 

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