Conductive layer formation by high-dose Si ion implantation into SiO2

Miyake, Masayasu; Kiuchi, Kazuhide
May 1985
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p879
Academic Journal
It is found that a conductive layer in SiO[sub 2] is formed by high-dose Si ion implantation followed by As ion implantation into SiO[sub 2]. Sheet resistance of the Si-implanted SiO[sub 2] layer changes from 10[sup 10] to 10[sup 3] Ω/... according to ion implantation conditions and annealing temperature. Auger electron spectroscopy analysis and reflecting electron diffraction show that the Si-implanted layer consists of both polycrystalline Si and amorphous Si.


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