TITLE

Capacitance decrease due to stress in a Cu-doped, n-type Si Schottky diode

AUTHOR(S)
Tōyama, Naotake
PUB. DATE
May 1985
SOURCE
Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p892
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In Au n-type Si Schottky diodes heavily doped with copper, a remarkable decrease in the depletion layer capacitance is frequently observed by applying stress. It was found that the capacitance decrease due to stress was attributed to the change of the copper substitutional species (Cu[sub I]) dissolved in silicon into other different copper-associated species (Cu[sub II]) in accordance with a stress level. Since the capacitance decrease due to stress becomes conspicuous, too, as the signal frequency of measurement is increased, we can expect an application as a stress-sensitive capacitor.
ACCESSION #
9817442

 

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