Selective area growth of GaAs and In0.53Ga0.47As epilayer structures by chemical beam epitaxy using silicon shadow masks: A demonstration of the beam nature

Tsang, W. T.
April 1985
Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p742
Academic Journal
Selective area growth of GaAs and In0.53Ga0.47As epilayer structure with well-defined smooth edges has been achieved with a Si mask shadowing technique for chemical beam epitaxy (CBE). Epilayer stripes with widths as narrow as 2–5 μm have been replicated. An experiment was also conducted to unequivocally establish the beam nature of CBE and the absence of a stagnant gas boundary layer above the substrate surface during growth which is present in both atmospheric and low-pressure metalorganic chemical vapor deposition.


Related Articles

  • On the possibility of growth quantum dot arrays in InAs/GaAs system by droplet epitaxy under MOVPE conditions. Akchurin, R. Kh.; Boginskaya, I. A.; Vagapova, N. T.; Marmalyuk, A. A.; Panin, A. A. // Technical Physics Letters;Jan2010, Vol. 36 Issue 1, p4 

    We have experimentally studied the possibility of obtaining InAs quantum dot arrays on GaAs(100) substrates by droplet-island growth under low-temperature (160–360°C) metalorganic vapor phase epitaxy (MOVPE) conditions. It is established that trimethylindium (In source) exhibits...

  • Morphology evolution during strained (In,Ga)As epitaxial growth on GaAs vicinal (100) surfaces. Wang, Z. M.; Shultz, J. L.; Salamo, G. J. // Applied Physics Letters;9/1/2003, Vol. 83 Issue 9, p1749 

    Molecular-beam-epitaxy growth of strained (In,Ga)As on GaAs vicinal (100) surfaces is investigated by scanning tunneling microscopy. Surface roughing as the consequence of step bunching driven by strain is explored. By tuning the In content over the range from 0.05 to 0.2, the step bunching is...

  • Wavelength tuning of InAs quantum dots grown on InP (100) by chemical-beam epitaxy. Gong, Q.; Nötzel, R.; van Veldhoven, P.J.; Eijkemans, T.J.; Wolter, J.H. // Applied Physics Letters;1/12/2004, Vol. 84 Issue 2, p275 

    We report on an effective way to continuously tune the emission wavelength of InAs quantum dots (QDs) grown on InP (100) by chemical-beam epitaxy. The InAs QD layer is embedded in a GaInAsP layer lattice matched to InP. With an ultrathin GaAs layer inserted between the InAs QD layer and the...

  • Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures. Grunthaner, F. J.; Yen, M. Y.; Fernandez, R.; Lee, T. C.; Madhukar, A.; Lewis, B. F. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p983 

    We report successful molecular beam epitaxial growth of thin multiple quantum well structures of GaAs/InAs(100) involving 7.4% lattice mismatch. Cross-sectional transmission electron microscopy studies reveal well formed interfaces and low defect density.

  • Influence of oxygen incorporation on beryllium-doped InGaAs grown by molecular beam epitaxy. Le Corre, A.; Caulet, J.; Gauneau, M.; Loualiche, S.; L’Haridon, H.; Lecrosnier, D.; Roizes, A.; David, J. P. // Applied Physics Letters;11/16/1987, Vol. 51 Issue 20, p1597 

    InGaAs epitaxial layers have been doped with beryllium with concentrations ranging from 1016 to 5×1019 cm-3 as measured by secondary ion mass spectroscopy (SIMS). From electrical measurements we have observed that p-type layers presented a high degree of compensation, and for a doping level...

  • Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy. Reithmaier, J.-P.; Cerva, H.; Lösch, R. // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p48 

    We have studied strained InGaAs quantum wells with GaAlAs barriers, grown by molecular beam epitaxy, varying In content and well thickness. Photoluminescence measurements were made at 12 K. The appearance of a characteristic additional exciton-like photoluminescence peak indicates the transition...

  • Plasma-assisted epitaxial growth of InAs. Fang, Sun Fei; Matsushita, Koichi; Hariu, Takashi // Applied Physics Letters;4/3/1989, Vol. 54 Issue 14, p1338 

    InAs layers were epitaxially grown directly on GaAs, InP, and GaSb at relatively low temperatures by plasma-assisted epitaxy (PAE) in hydrogen plasma. The electronic and crystallographic properties of PAE-InAs grown on substrates with different lattice mismatch were comparatively studied with a...

  • In islands and their conversion to InAs quantum dots on GaAs (100): Structural and optical properties. Urbanczyk, A.; Hamhuis, G. J.; Nötzel, R. // Journal of Applied Physics;Jan2010, Vol. 107 Issue 1, p014312 

    We report growth of crystalline In islands on GaAs (100) by molecular beam epitaxy at low temperatures. The islands have a pyramidlike shape with well defined facets and epitaxial relation with the substrate. They are of nanoscale dimensions with high density. Above a certain substrate...

  • Epitaxial growth of 20 nm InAs and GaAs quantum dots on GaAs through block copolymer templated SiO2 masks. Alizadeh, Azar; Hays, David; Taylor, Seth T.; Keimel, Chris; Conway, Ken R.; Denault, Lauraine; Krishnan, Kasiraman; Watkins, Vicki H.; Neander, Rosalyn; Brown, Jay S.; Stintz, Andreas; Krishna, Sanjay; Blumin, Marina; Saveliev, Igor; Ruda, Harry E.; Braunstein, Edit; Jones, Colin // Journal of Applied Physics;Mar2009, Vol. 105 Issue 5, pN.PAG 

    We report on selective area growth of InAs and GaAs quantum dots (QDs) on GaAs through ∼20 nm SiO2 windows prepared by block copolymer lithography. We discuss the mechanisms of growth through these masks, highlighting the variation of the resulting morphology (dot size, spacing, uniformity,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics