TITLE

Selective area growth of GaAs and In0.53Ga0.47As epilayer structures by chemical beam epitaxy using silicon shadow masks: A demonstration of the beam nature

AUTHOR(S)
Tsang, W. T.
PUB. DATE
April 1985
SOURCE
Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p742
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Selective area growth of GaAs and In0.53Ga0.47As epilayer structure with well-defined smooth edges has been achieved with a Si mask shadowing technique for chemical beam epitaxy (CBE). Epilayer stripes with widths as narrow as 2–5 μm have been replicated. An experiment was also conducted to unequivocally establish the beam nature of CBE and the absence of a stagnant gas boundary layer above the substrate surface during growth which is present in both atmospheric and low-pressure metalorganic chemical vapor deposition.
ACCESSION #
9817422

 

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