High-speed ellipsometry of arsenic-implanted Si during cw laser annealing

Moritani, A.; Hamaguchi, C.
April 1985
Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p746
Academic Journal
Ellipsometric study of solid phase epitaxial growth during cw Ar-ion laser annealing in arsenic-implanted Si is reported for the first time. Use of a high-speed microscopic ellipsometer has made it possible to measure growth rates and growth temperature under laser irradiation.


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