TITLE

Doping level selective photochemical dry etching of GaAs

AUTHOR(S)
Ashby, C. I. H.
PUB. DATE
April 1985
SOURCE
Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p752
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The first observation of a highly selective photochemical dry etching process which discriminates between semiconductor materials differing in dopant concentrations by less than a factor of 5 is reported here. A photochemical reaction of GaAs with gas phase reactive Cl species occurs when the surface is irradiated with low-intensity light of band gap or greater quantum energies. Application of an appropriate negative bias to a GaAs sample can almost totally suppress the photochemical reaction of heavily doped n-GaAs, while less heavily doped n-GaAs or p-GaAs continue to etch at undiminished rates under the same conditions. This is the first reported etching process to produce greater than 20:1 selectivity for doping levels differing by less than a factor of 5. A mechanism which may explain the origin of the photochemical reaction and the voltage-controlled doping level selectivity which it displays is presented here. The potential significance of these observations for other semiconductor materials, such as Si, is discussed.
ACCESSION #
9817418

 

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