Doping level selective photochemical dry etching of GaAs

Ashby, C. I. H.
April 1985
Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p752
Academic Journal
The first observation of a highly selective photochemical dry etching process which discriminates between semiconductor materials differing in dopant concentrations by less than a factor of 5 is reported here. A photochemical reaction of GaAs with gas phase reactive Cl species occurs when the surface is irradiated with low-intensity light of band gap or greater quantum energies. Application of an appropriate negative bias to a GaAs sample can almost totally suppress the photochemical reaction of heavily doped n-GaAs, while less heavily doped n-GaAs or p-GaAs continue to etch at undiminished rates under the same conditions. This is the first reported etching process to produce greater than 20:1 selectivity for doping levels differing by less than a factor of 5. A mechanism which may explain the origin of the photochemical reaction and the voltage-controlled doping level selectivity which it displays is presented here. The potential significance of these observations for other semiconductor materials, such as Si, is discussed.


Related Articles

  • Digital etching of GaAs: New approach of dry etching to atomic ordered processing. Meguro, T.; Hamagaki, M.; Modaressi, S.; Hara, T.; Aoyagi, Y.; Ishii, M.; Yamamoto, Y. // Applied Physics Letters;4/16/1990, Vol. 56 Issue 16, p1552 

    A new approach to dry etching of GaAs, digital etching, has been demonstrated. In digital etching, the etchant and an energetic beam, which induces chemical sputtering at the surface, alternately impinge onto the surface. Electrons and Cl2 gas were used as the energetic beam and the etchant,...

  • Diffraction limited dry etching of GaAs at lambda=130 nm. Li, B.; Twesten, I. // Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1635 

    Demonstrates the diffraction limited dry etching of gallium arsenide substrate. Evidence of the etching due to light diffraction; Penetration of high kinetic fragments into the substrate; Ability of the fragments to stimulate the reservoir of chlorine atoms.

  • Photochemical dry etching of GaAs. Ashby, C. I. H. // Applied Physics Letters;1984, Vol. 45 Issue 8, p892 

    GaAs exhibits greatly enhanced reactivity with gas-phase reactive Cl species when the surface is irradiated with low intensity laser light having a frequency which can excite above the band gap of GaAs. This laser-induced reactivity is shown to be photochemical rather than thermal in origin....

  • Electrical characterization of defects in SiCl[sub 4] plasma-etched n-GaAs and Pd Schottky.... Auret, F.D.; Myburg, G. // Applied Physics Letters;8/4/1997, Vol. 71 Issue 5, p668 

    Examines the electrical properties of defects introduced in n-gallium arsenide (GaAs) layers during dry etching in a silicon tetrachloride plasma. Use of deep-level transient spectroscopy to determine the electrical properties; Characteristics of the plasma introduced defects; Fabrication of...

  • Etching of As- and P-Based III-V Semiconductors in a Planar Inductively Coupled BCl3/Ar Plasma. Lee, J. W.; Lim, W. T.; Baek, I. K.; Yoo, S. R.; Jeon, M. H.; Cho, G. S.; PEARTON, S. J. // Journal of Electronic Materials;Apr2004, Vol. 33 Issue 4, p358 

    A parametric study of the etch characteristics of Ga-based (GaAs, GaSb, and AlGaAs) and In-based (InGaP, InP, InAs, and InGaAsP) compound semiconductors in BCl3/Ar planar inductively coupled plasmas (ICPs) was performed. The Ga-based materials etched at significantly higher rates, as expected...

  • Electron-beam-assisted dry etching for GaAs using electron cyclotron resonance plasma electron.... Watanabe, Heiji; Matsui, Shinji // Applied Physics Letters;12/21/1992, Vol. 61 Issue 25, p3011 

    Develops an electron-beam (EB)-assisted dry etching technique for gallium arsenide. Use of argon electron cyclotron resonance plasma as an electron shower source; Dependence of ion beam and EB current density on acceleration voltage and polarity; Results of photoluminescence measurement;...

  • Si and GaAs dry etching utilizing showered electron-beam assisted etching through Cl[sub 2] gas. Matsui, S.; Watanabe, H. // Applied Physics Letters;10/28/1991, Vol. 59 Issue 18, p2284 

    Examines electron beam dry etching for silicon (Si) and gallium arsenide (GaAs). Use of electron-beam assisted etching with chlorine gas; Linewidths of Si and GaAs patterns; Dosage of the etchants.

  • Performance of dry-etched short cavity GaAs/AlGaAs multiquantum-well lasers. Yuasa, Tonao; Yamada, Tomoyuki; Asakawa, Kiyoshi; Ishii, Makoto; Uchida, Mamoru // Journal of Applied Physics;3/1/1988, Vol. 63 Issue 5, p1321 

    Presents a study which described the fabrication and lasing characteristics of short cavity gallium arsenide/aluminum gallium arsenide multiquantum-well lasers with dry-etched facets. Information on short cavity lasers and dry etching; Fabrication procedure; Results and discussion.

  • Low energy electron-enhanced etching of GaAs(100) in a chlorine/hydrogen dc plasma. Gillis, H.P.; Choutov, D.A. // Applied Physics Letters;4/15/1996, Vol. 68 Issue 16, p2255 

    Examines low energy electron-enhanced etching of gallium arsenide(100). Use of low-pressure hydrogen/chlorine direct current discharge plasma; Evidence of good anisotropy and selectivity in samples etched at room temperature; Dependence of etch characteristics on gas composition, pressure and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics