TITLE

Reversal of contrast for infrared absorption of deep levels in semi-insulating GaAs

AUTHOR(S)
Queisser, Hans J.
PUB. DATE
April 1985
SOURCE
Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p757
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new interpretation is offered for the observed reversal of contrast in the infrared absorption of nonuniformly distributed deep centers, related to EL2, in large-diameter, liquid-encapsulation-grown, semi-insulating GaAs. In the photoquenched state, having reversed contrast, the absorption originates in electrons, having been transferred from spatially clustered deep centers onto shallow centers adjacent to these clusters. Transfer is achieved by photon absorption and subsequent removal via the built-in electric fields, generated by the clustering of the deep centers.
ACCESSION #
9817415

 

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