Reversal of contrast for infrared absorption of deep levels in semi-insulating GaAs

Queisser, Hans J.
April 1985
Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p757
Academic Journal
A new interpretation is offered for the observed reversal of contrast in the infrared absorption of nonuniformly distributed deep centers, related to EL2, in large-diameter, liquid-encapsulation-grown, semi-insulating GaAs. In the photoquenched state, having reversed contrast, the absorption originates in electrons, having been transferred from spatially clustered deep centers onto shallow centers adjacent to these clusters. Transfer is achieved by photon absorption and subsequent removal via the built-in electric fields, generated by the clustering of the deep centers.


Related Articles

  • Guided self-assembly of Au nanocluster arrays electronically coupled to semiconductor device layers. Liu, Jia; Jia Liu; Lee, Takhee; Takhee Lee; Janes, D. B.; Janes, D.B.; Walsh, B. L.; Walsh, B.L.; Melloch, M. R.; Melloch, M.R.; Woodall, J. M.; Woodall, J.M.; Reifenberger, R.; Andres, R. P.; Andres, R.P. // Applied Physics Letters;7/17/2000, Vol. 77 Issue 3 

    We report the controlled deposition of close-packed monolayer arrays of ∼5-nm-diam Au clusters within patterned regions on GaAs device layers, thus demonstrating guided self-assembly on a substrate which can provide interesting semiconductor device characteristics. Uniform nanometer scale...

  • Microscopic study of cluster formation in the Ga on GaAs(001) system. Lowes, T. D.; Zinke-Allmang, M. // Journal of Applied Physics;5/15/1993, Vol. 73 Issue 10, p4937 

    Presents results of a microscopic study of the cluster formation in the gallium on gallium arsenide. Description of volume fractions observed in clusters below the surface level of the surrounding substrate; Description of the thermodynamic model used in the study; Details of the quantitative...

  • On the Properties of a Radiation-Induced Defect Responsible for the 1.0-eV IR Absorption Band in Gallium Arsenide. Dzhibuti, Z. V.; Dolidze, N. D. // Technical Physics Letters;Dec2001, Vol. 27 Issue 12, p1008 

    The IR absorption spectra were measured at 77 K for Te-doped n-GaAs samples irradiated by electrons with an energy of E = 3 MeV. It was found that the samples exhibit two absorption bands in the IR range, corresponding to 1.0 and 0.8 eV.

  • Photon-induced recovery of photoquenched EL2 intracenter absorption in GaAs. Fischer, David W. // Applied Physics Letters;6/15/1987, Vol. 50 Issue 24, p1751 

    After the EL2 absorption band at 1.2 eV is fully photoquenched [i.e., EL2 defect completely transferred from the normal (EL20) to metastable (EL2*) state] it can be partially recovered by photon excitation. This EL2*→EL20 recovery exhibits peaks at 0.80 and 0.90 eV with shoulders at 0.86...

  • Fine structure of EL2 defect absorption in GaAs. Kuszko, W.; Jeżewski, M.; Baranowski, J. M.; Kaminska, M. // Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2558 

    High-resolution measurements of the zero phonon line (ZPL) of the EL2 intracenter absorption were performed. Several samples, both Czochralski and Bridgman grown, have been examined. The shape and position of the ZPL were virtually identical for all the samples. No splitting of the ZPL was detected.

  • Ultrafast dynamics of nonlinear absorption in low-temperature-grown GaAs. Benjamin, S.D.; Loka, H.S. // Applied Physics Letters;4/29/1996, Vol. 68 Issue 18, p2544 

    Investigates the subpicosecond behavior of optically induced absorption changes in low-temperature-grown gallium arsenide. Dominance of mid-gap trap states in the observed behavior; Measurement of the absorption dynamics of the gallium arsenide; Verification of the validity of the rate equation...

  • Acceptor assessment and the role of carbon in semi-insulating GaAs. Moore, W.J.; Henry, R.L. // Applied Physics Letters;2/10/1997, Vol. 70 Issue 6, p738 

    Presents a method for identifying and quantifying acceptor contamination in semi-insulating gallium arsenide (SI GaAs). Application of the method to commercial SI GaAs and NRL zone-refined ingots; Use of infrared transmission spectroscopy; Relationship between absorption strength and neutral...

  • Optical nonlinearity in low-temperature-grown GaAs: Microscopic limitations and optimization... Haiml, M.; Siegner, U. // Applied Physics Letters;5/24/1999, Vol. 74 Issue 21, p3134 

    Studies the linear and nonsaturable absorption as well as the absorption modulation and its recovery time in as-grown and annealed low-temperature gallium arsenide. Correlation of the optical data with As antisite defect densities; Role of the defect transition in nonsaturable absorption.

  • Full-wafer mapping of total and ionized EL2 concentration in semi-insulating GaAs using infrared absorption. Brierley, Steven K.; Lehr, Deborah S. // Applied Physics Letters;12/4/1989, Vol. 55 Issue 23, p2426 

    By combining infrared absorption data taken at two different wavelengths in the spectral region in which the native deep donor EL2 absorbs in GaAs, it is possible to determine the distribution of the total EL2 concentration and its filled fraction across a semi-insulating GaAs substrate. The...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics