Schottky barrier diodes on 3C-SiC

Yoshida, S.; Sasaki, K.; Sakuma, E.; Misawa, S.; Gonda, S.
April 1985
Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p766
Academic Journal
Schottky barrier contacts have been made on n-type 3C-SiC epitaxially grown by chemical vapor deposition, and their characteristics were studied by the capacitance and photoresponse measurements. By evaporating Au onto chemically etched surfaces of 3C-SiC, good quality Schottky barrier junctions have been obtained. The barrier height determined by the capacitance measurements is 1.15 (±0.15) eV, while the height by the photoresponse measurements is 1.11 (±0.03) eV. These values are about a half of the energy band gap Eg at room temperature.


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