Valence-band discontinuities at AlAs-based heterojunction interfaces

Kelly, M. K.; Niles, D. W.; Colavita, E.; Margaritondo, G.; Henzler, M.
April 1985
Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p768
Academic Journal
We extended our empirical method for estimating heterojunction band discontinuities to systems containing AlAs. The necessary data were provided by a synchrotron-radiation photoemission study of the AlAs-Ge interface formation. Our results suggest that the ‘‘15%–85%’’ rule deduced for Ga1-xAlxAs-GaAs cannot be extrapolated to AlAs-GaAs.


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