TITLE

Valence-band discontinuities at AlAs-based heterojunction interfaces

AUTHOR(S)
Kelly, M. K.; Niles, D. W.; Colavita, E.; Margaritondo, G.; Henzler, M.
PUB. DATE
April 1985
SOURCE
Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p768
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We extended our empirical method for estimating heterojunction band discontinuities to systems containing AlAs. The necessary data were provided by a synchrotron-radiation photoemission study of the AlAs-Ge interface formation. Our results suggest that the ‘‘15%–85%’’ rule deduced for Ga1-xAlxAs-GaAs cannot be extrapolated to AlAs-GaAs.
ACCESSION #
9817408

 

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