TITLE

New method of measuring relaxation times in semiconductors

AUTHOR(S)
Mukherjee, P.; Sheik-Bahaei, M.; Kwok, H. S.
PUB. DATE
April 1985
SOURCE
Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p770
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new method of measuring relaxation times of free carriers in semiconductors is proposed and demonstrated. It is based on the pulse duration dependence of free-carrier absorption through the sample. This method has been demonstrated with GaAs and InSb.
ACCESSION #
9817406

 

Related Articles

  • Generation of Minority Charge Carriers at the Semiconductor Surface during Thermally Activated Ionic Depolarization of Metal–Insulator–Semiconductor Structures. Gol’dman, E. I.; Zhdan, A. G.; Kukharskaya, N. F.; Chucheva, G. V. // Semiconductors;Mar2000, Vol. 34 Issue 3, p277 

    Relaxation signals represented by the temperature dependences of current J(T) and high-frequency capacitance C(T) and generated in the course of the thermally stimulated depolarization of a metal-insulatorsemiconductor structure were analyzed numerically. Both the depletion of ionic traps...

  • Structural properties of partially relaxed In[sub x]Ga[sub 1-x]As layers grown on (100) and.... Maigne, P.; Roth, A.P. // Applied Physics Letters;2/22/1993, Vol. 62 Issue 8, p873 

    Investigates the structural properties of partially relaxed In[sub 0.20]Ga[sub 0.80]As layers grown simultaneously on (100) and misoriented GaAs substrates. Magnitude and direction of the tilt between layer and substrate; Influence of substrate misorientation on mismatch strain relaxation;...

  • Damping of the relaxation resonance in multiple-quantum-well lasers by slow interwell transport. Hangleiter, A.; Grabmaier, A.; Fuchs, G. // Applied Physics Letters;5/10/1993, Vol. 62 Issue 19, p2316 

    Examines the increased damping of the relaxation resonance observed in multiple-quantum-well laser. Accounts of a model integrating the slow hole transport between individual wells; Influence of hole transport on carrier distribution; Difference between lasers of varying structure and lasers...

  • Plasma-heating induced intensity-dependent gain in semiconductor lasers. Ning, C.Z.; Moloney, J.V. // Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p559 

    Examines the plasma-heating induced intensity-dependent gain in semiconductor lasers. Dependence of scaling exponent on relaxation constant; Difference between plasma and lattice temperatures; Factors attributing the rate of heat dissipation from plasma to the lattice.

  • Effect of Si doping on the relaxation mechanism of InGaAs on GaAs. Parbrook, P. J.; Tanner, B. K.; Lunn, B.; Hogg, J. H. C.; Keir, A. M.; Johnson, A. D. // Applied Physics Letters;10/7/2002, Vol. 81 Issue 15, p2773 

    We report measurements on the initial stages of relaxation of Si-doped In[SUB0.04]Ga[SUB0.96]As epitaxial layers on (001) GaAs using in situ high-resolution double-crystal x-ray topography during molecular beam epitaxial growth. For Si concentrations up to 5 × 10[SUP18] cm[SUP-3], the...

  • Optical Bistability and Instability in a Semiconductor in the Case Where the Relaxation Time of Free Charge Carriers and Their Equilibrium Concentration are Temperature-Dependent. Bondarenko, O. S.; Lysak, T. M.; Trofimov, V. A. // Semiconductors;Sep2000, Vol. 34 Issue 9, p1031 

    The influence of temperature dependences of the relaxation time of free carriers and their equilibrium concentration on the feasibility of the bistability and instability of steady states is considered. A model describing the process of interaction of optical radiation with a semiconductor was...

  • Relaxation Dynamics of Mn[sup 2+] Intraion Excitation in Cd[sub 0.5]Mn[sub 0.5]Te: Dependence on the Optical Pumping Level. Agekyan, V. F.; Vasil’ev, N. N.; Serov, A. Yu.; Filosofov, N. G.; Yakimovich, V. N. // Physics of the Solid State;Sep2001, Vol. 43 Issue 9, p1626 

    A study is reported of the Mn[sup 2+] intracenter 3d luminescence in a dilute Cd[sub 0.5]Mn[sub 0.5]Te magnetic semiconductor at pulsed excitations of up to 3.5 MW/cm². At high excitation levels and at a temperature of 77 K, the kinetics varies strongly over the emission band profile. The...

  • Electron-Energy Relaxation in Polar Semiconductor Double Quantum Dots. Král, K.; Khás, Z.; Zdeněk, P.; Čerňanský, M.; Lin, C. Y. // International Journal of Modern Physics B: Condensed Matter Phys;10/30/2001, Vol. 15 Issue 27, p3503 

    The zero-dimensional semiconductor nanostructures belong to the candidates for the realization of the quantum bits. They are expected to be scalable for the purpose of tuning their physical properties. In these structures the quantum bit could be realized in the form of a single quantum dot with...

  • Plastic relaxation of InGaAs grown on GaAs. Dunstan, D.J.; Kidd, P.; Howard, L.K.; Dixon, R.H. // Applied Physics Letters;12/23/1991, Vol. 59 Issue 26, p3390 

    Examines the plastic relaxation of InGaAs layers grown above critical thickness on gallium arsenide substrates. Features of the plastic relaxation; Origin of the residual strain; Observation on the crystalline quality of the relaxed layers.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics