Photoresponse of the AsGa antisite defect in as-grown GaAs

Baeumler, M.; Kaufmann, U.; Windscheif, J.
April 1985
Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p781
Academic Journal
The photoresponse of the As+Ga antisite electron-paramagnetic-resonance (EPR) has been studied in as-grown semi-insulating GaAs as a function of illumination time and photon energy hν. The As+Ga EPR signal intensity changes are nonmonotonic in time in the range 1.1<=hν<=1.4 eV. The spectral dependences of As+Ga enhancement and quenching show distinct similarities with the EL2 optical cross sections σ0n (hν) and σ0p (hν), respectively. These results demonstrate that the EL2 defect and the AsGa antisite have practically identical optical and photoelectronic properties.


Related Articles

  • Comparative study of implantation-induced damage in GaAs and Ge: Temperature and flux dependence. Haynes, T.E.; Holland, O.W. // Applied Physics Letters;7/22/1991, Vol. 59 Issue 4, p452 

    Investigates damage accumulation during ion implantation of 100 keV Si[sup +] into gallium arsenide and germanium. Comparison of the amount of damage created in GaAs and Ge; Dependence of the damage in the two materials on dose and temperature; Exhibition of well-defined transition temperatures.

  • Thermally stimulated current in neutron-transmutation-doped semi-insulating GaAs. Kuriyama, K.; Yokoyama, K.; Satoh, Akemi // Applied Physics Letters;9/9/1991, Vol. 59 Issue 11, p1326 

    Evaluates the defects in neutron-transmutation-doped semi-insulating gallium arsenide using a thermally stimulated current (TSC) method. Decomposition of some native defects; Observation of one TSC peak in an as-irradiated sample; Association of the peak with a complex defect.

  • Measurement of damage profile in semiconductors: A sensitive optical technique. Shwe, C.; Gal, M. // Applied Physics Letters;2/1/1993, Vol. 62 Issue 5, p516 

    Measures the depth distribution of damage in gallium arsenide semiconductors. Use of differential reflectance spectroscopy in combination with chemical-etch removal of surface layer; Creation of damage by several ion-assisted processes; Estimation of the method depth resolution.

  • Electronic properties of defects introduced during low-energy He-ion bombardment of epitaxially grown n-GaAs. Auret, F.D.; Goodman, S.A. // Applied Physics Letters;6/3/1996, Vol. 68 Issue 23, p3275 

    Investigates the defects introduced by low-energy helium-ion bombardment of epitaxially grown n-gallium arsenide. Application of deep level transient spectroscopy; Introduction of four electron traps on high energy levels; Location of defects in disordered region close to interface.

  • Minority carrier capture cross section of the EL[sub 2] defect in GaAs. Zaidi, M.A.; Maaref, H. // Applied Physics Letters;11/16/1992, Vol. 61 Issue 20, p2452 

    Determines minority carrier capture cross section of EL2 defect in gallium arsenide (GaAs). Investigation of defects responsible for nonradiative recombination in semiconductors using junction capacitance techniques; Measurement of majority carrier cross section of EL2 defect in GaAs; Methods...

  • Ultralow damage depth by electron cyclotron resonance plasma etching of GaAs/InGaAs quantum wells. Bickl, T.; Jacobs, B.; Straka, J.; Forchel, A. // Applied Physics Letters;3/8/1993, Vol. 62 Issue 10, p1137 

    Examines the ultralow damage depth of gallium arsenide/indium gallium arsenide quantum wells in an electron cyclotron resonance reactor. Use of photoluminescence measurements in determining etch process effects; Impact of lower pressure on electron gas temperature; Influence of ion bombardment...

  • Strain and defect generation during interdiffusion of GaAs into Al[sub 0.5]In[sub 0.5]P. Thornton, R.L.; Ponce, F.A.; Anderson, G.B.; Endicott, F.J. // Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2060 

    Investigates the interdiffusion of GaAs strain and defect generation into Al[sub 0.5]In[sub 0.5]P. Introduction of substantial defect producing strain; Application of critical thickness analysis to interdiffused structures; Enhancement of interdiffusion through silicon diffusion.

  • Effects of Be and Si on disordering of the AlAs/GaAs superlattice. Kawabe, Mitsuo; Shimizu, Norisato; Hasegawa, Fumio; Nannichi, Yasuo // Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p849 

    Effects of Be doping and the interaction of Be and Si on the disordering of 15-nm AlAs/15-nm GaAs superlattices were studied. Be doping of more than 4 × l0[sup 19] cm[sup -3] causes the intermixing of A1 and Ga during epitaxial growth and the effect of Be surface accumulation is observed at...

  • Microstructural characterization of patterned gallium arsenide grown on <001> silicon substrates. Matyi, R. J.; Shichijo, H.; Moore, T. M.; Tsai, H-L. // Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p18 

    The microstructure of patterned GaAs grown on Si substrates by molecular beam epitaxy has been examined with both transmission and scanning electron microscopies. The GaAs was found to be single crystal with excellent morphology to the limit of the plasma oxide defining mask. In samples where...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics