TITLE

InGaAs/InP distributed feedback quantum well laser

AUTHOR(S)
Temkin, H.; Tanbun-Ek, T.; Logan, R. A.; Olsson, N. A.; Sergent, M. A.; Wecht, K. W.; Cebula, D. A.
PUB. DATE
September 1990
SOURCE
Applied Physics Letters;9/24/1990, Vol. 57 Issue 13, p1295
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We describe InGaAs/InP multiquantum well distributed feedback (DFB) lasers with novel properties atrributable to the quantum well based active layer. The low internal loss waveguide and shallow gratings have allowed the fabrication of lasers with a cavity length varying from 0.5 to 2 mm, and corresponding threshold currents of 22 and 100 mA, respectively. A mode rejection ratio as high as 50 dB has been obtained in lasers with one antireflection-coated facet. The long cavity devices exhibit linewidths as low as 600 kHz at a power output of 35 mW. Transmission experiments through 70 km of fiber, at 1.7 Gb/s, showed a dynamic chirp penalty of only 0.25 dB, a factor of 8–10 smaller than in conventional lasers.
ACCESSION #
9817396

 

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