TITLE

High-speed InP optoelectronic switch with a tandem structure

AUTHOR(S)
Hori, Yoshikazu; Paslaski, Joel; Yi, Maobin; Yariv, Amnon
PUB. DATE
April 1985
SOURCE
Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p749
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A tandem-structure InP-optoelectronic switch has been fabricated and studied. This optoelectronic switch is capable of generating short electrical pulses, as well as varying the duration of electrical pulses between 40 and 400 ps (full width at half-maximum). The duration of the electrical pulses and the shortest pulse limit of the new switch are analyzed using a simple electrical model, and good agreement with experimental results has been obtained. The results indicate that the tandem-structure, optoelectronic switch can produce electrical pulses as short as the rise time of a single-structure switch, which is determined only by the electrical circuit time constant of the parallel switch capacitance and transmission line impedance.
ACCESSION #
9817384

 

Related Articles

  • Indium Phosphide ICs Complement CMOS. Raghavan, Gopal // Siliconindia;Jun2003, Vol. 7 Issue 5, p38 

    Discusses the use of indium phosphide in high-speed optoelectronic applications. Characteristics of indium phosphide; Difference from other semiconductors; Other applications of indium phosphide.

  • Intervalence band absorption in InP and related materials for optoelectronic device modeling. Taylor, Jason; Tolstikhin, Valery // Journal of Applied Physics;2/1/2000, Vol. 87 Issue 3, p1054 

    Presents information on a study which calculated the intervalence band absorption (IVBA) spectra of indium phosphide and related materials for optoelectronic device modeling. Formulation of IVBA coefficient; Numerical results and discussion; Conclusions.

  • Improved reliability of red GaInP vertical-cavity surface-emitting lasers using bias-induced annealing. Herrick, Robert W.; Petroff, Pierre M. // Applied Physics Letters;4/13/1998, Vol. 72 Issue 15 

    We have used a bias-induced annealing process to improve the initial performance and the reliability of red (680 nm) Ga[sub .46]In[sub .54]P vertical-cavity surface-emitting lasers. Measurements showed improved cathodoluminescence efficiency and increased current collection efficiency after the...

  • Concentration gradient at an InP/GaAs interface determined by Auger analysis on a chemical bevel. Cazaux, J.; Etienne, P.; Razeghi, M. // Journal of Applied Physics;5/15/1986, Vol. 59 Issue 10, p3598 

    Discusses the experimental results of Auger profiles obtained on a chemical bevel of an indium phosphide/gallium arsenide (InP/GaAs) structure. Significance of an accurate characterization of heteroepitaxial layers in the research and development of optoelectronic and high-speed devices;...

  • Capless rapid thermal annealing of Si+-implanted InP. Woodhouse, J. D.; Gaidis, M. C.; Donnelly, J. P.; Armiento, C. A. // Applied Physics Letters;7/20/1987, Vol. 51 Issue 3, p186 

    An enhanced-overpressure capless annealing technique suitable for annealing ion-implanted InP at temperatures of 900 °C is described. The technique utilizes a Sn-coated InP wafer and is based on the same principle as the In-Sn-P liquid-solution method for eliminating InP surface degradation...

  • Laser-induced dry etching of integrated InP microlenses. Matz, R.; Weber, H.; Weimann, G. // Applied Physics A: Materials Science & Processing;1997, Vol. 65 Issue 4/5, p349 

    Maskless laser dry etching of monolithically integrated InP microlenses for infrared–optical coupling between optoelectronic devices and a glass fiber at 1.53 μm wavelength is reported. The process is based on the projection of a conventional chromium-on-quartz reticle on to the InP...

  • Iron redistribution and compensation mechanisms in semi-insulating Si-implanted InP. Bahir, G.; Merz, J. L.; Abelson, J. R.; Sigmon, T. W. // Journal of Applied Physics;2/1/1989, Vol. 65 Issue 3, p1009 

    Presents a study which measured the silicon and iron depth distributions in silicon-implanted semi-insulating indium phosphide as a function of implant temperature and post-implants annealing technique. Applications of indium phosphide in optoelectronic and microwave devices; Investigation of...

  • Room temperature quantum cascade lasers with 27% wall plug efficiency. Bai, Y.; Bandyopadhyay, N.; Tsao, S.; Slivken, S.; Razeghi, M. // Applied Physics Letters;5/2/2011, Vol. 98 Issue 18, p181102 

    Using the recently proposed shallow-well design, we demonstrate InP based quantum cascade lasers (QCLs) emitting around 4.9 μm with 27% and 21% wall plug efficiencies in room temperature (298 K) pulsed and continuous wave (cw) operations, respectively. The laser core consists of 40...

  • Carrier dynamics in InP nanopillar arrays fabricated by low-damage etching. Naureen, S.; Shahid, N.; Gustafsson, A.; Liuolia, V.; Marcinkevicˇius, S.; Anand, S. // Applied Physics Letters;5/27/2013, Vol. 102 Issue 21, p212106 

    We present a comprehensive characterization of the optical quality of InP nanopillars (NPs) fabricated by a top down approach using micro-photoluminescence (μ-PL), time-resolved PL, and cathodoluminescence (CL). A lattice matched InGaAs layer provided beneath the 1 μm tall NPs functions as...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics