TITLE

Single-crystal n-InAs coupled Josephson junction

AUTHOR(S)
Kawakami, Tsuyoshi; Takayanagi, Hideaki
PUB. DATE
January 1985
SOURCE
Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p92
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A high electron mobility single-crystal n-InAs coupled Josephson junction with refractory metal Nb electrodes has been fabricated. Josephson current has been obtained for devices with electron carrier concentrations of 1016–1018 cm-3 and with Nb electrode spacings longer than 0.5 μm. The devices have a planar geometry with implicit potential for gate control. The rf sputter cleaning of the InAs surface prior to Nb deposition is found to have significant effects on the performance of the devices. The device characteristics are explained by the proximity effect theory.
ACCESSION #
9817372

 

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