Titanium silicide formation on BF+2-implanted silicon

Chow, T. P.; Katz, W.; Smith, G.
January 1985
Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p41
Academic Journal
Thin-film interaction between titanium and BF+2 -implanted silicon substrates at 650–900 °C was investigated. At 650 °C, the incomplete Ti/Si reaction led to formation of a surface layer (∼600 Å thick) of titanium-rich silicide (Si/Ti ∼1.6) on top of a near-stoichiometric silicide layer. Annealing at 700 °C or higher resulted in conversion of the titanium film into predominantly TiSi2 and a lower sheet resistance. After annealing, boron was found to redistribute into the silicide layer and fluorine was segregated onto the silicide/silicon interface, but neither species apparently affected the overall sheet resistance for BF+2 dosages up to 6×1015 cm-2. A sheet resistance of ∼0.7 Ω/[Laplacian_variant] was obtained after annealing between 700 and 900 °C for 30 min.


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