TITLE

Plasma enhanced chemical vapor deposition of titanium diboride films

AUTHOR(S)
Williams, L. M.
PUB. DATE
January 1985
SOURCE
Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p43
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Thin films of titanium borides were deposited at temperatures from 480 to 650 °C using a glow discharge and feed gases of TiCl4, BCl3, and H2. High quality films have been obtained that are smooth, shiny, and crack-free; they have as-deposited resistivities as low as 200 μΩ cm. Films deposited with these moderate conditions have comparable properties to films deposited at high temperatures. These films have potential use as diffusion barriers or in other applications requiring a conducting refractory material.
ACCESSION #
9817353

 

Related Articles

  • Control of hydrogen content of boron thin films produced in a dc toroidal discharge. Toyoda, H.; Sugai, H.; Isozumi, T.; Okuda, T. // Applied Physics Letters;9/14/1987, Vol. 51 Issue 11, p798 

    Hydrogenated amorphous boron films have been produced by a toroidal glow discharge of B2H6/He mixtures at low pressures (10-2 Torr). Chemically stable pure films with a low hydrogen content can be formed at a moderate substrate temperature (∼200 °C) when the diborane flow rate is raised...

  • Surface loss probabilities of the dominant neutral precursors for film growth in methane and... Hopf, C.; Letourneur, K. // Applied Physics Letters;6/21/1999, Vol. 74 Issue 25, p3800 

    Investigates the surface loss probabilities of the dominant neutral growth species emanating from methane and acetylene discharges by depositing thin films inside a cavity. Analysis of the deposition profile inside the cavity; Upper limit for the reaction probability for CH[sub 3].

  • Properties of p+ microcrystalline films of SiC:H deposited by conventional rf glow discharge. Goldstein, B.; Dickson, C. R.; Campbell, I. H.; Fauchet, P. M. // Applied Physics Letters;12/26/1988, Vol. 53 Issue 26, p2672 

    Using a conventional rf glow discharge, we have grown microcrystalline p+ SiC:H films having conductivities 2–2×10-3 (Ω cm)-1 and activation energies 0.05–0.1 eV with carbon concentrations 0–6 at. %, respectively. Increasing the carbon content suppresses the...

  • Comparison between conventional and hollow cathode magnetron sputtering systems on the growing of titanium dioxide thin films: a correlation between the gas discharge and film formation. Duarte, D. A.; Massi, M.; da Silva Sobrinho, A.S. // European Physical Journal - Applied Physics;May2011, Vol. 54 Issue 2, pN.PAG 

    This paper reports the deposition of titanium dioxide thin films on p-type Si(100) substrates using two techniques called conventional magnetron sputtering (CMS) and hollow cathode magnetron sputtering (HCMS). The influence of the plasma parameters on the film characteristics (topography,...

  • Thin films of amorphous MoO3 as a negative resist. Gupta, P. K.; Chopra, K. L. // Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1527 

    Lithographic properties of amorphous MoO3 films exposed to a glow discharge hydrogen plasma have been investigated. It has been observed that the etching rate of an exposed film in alkaline solution is lower compared to an unexposed one, giving rise to a negative tone behavior of the material....

  • A study of hydrogenated amorphous silicon deposited by hot-wall glow discharge. Boulitrop, F.; Proust, N.; Magariño, J.; Criton, E.; Peray, J. F.; Dupre, M. // Journal of Applied Physics;11/1/1985, Vol. 58 Issue 9, p3494 

    Provides information on a study that examined thin films of hydrogenated amorphous silicon deposited in a hot-wall glow discharge apparatus. Methodology of the study; Results and discussion on the study; Conclusion.

  • Spectroscopic ellipsometry study of glow-discharge-deposited thin films of a-Ge:H. Blanco, J. R.; McMarr, P. J.; Vedam, K.; Ross, R. C. // Journal of Applied Physics;11/15/1986, Vol. 60 Issue 10, p3724 

    Examines thin films of hydrogenated amorphous germanium (a-Ge:H) contents prepared by the glow-discharge process using spectroscopic ellipsometry. Application of Bruggerman effective medium approximation; Differences in the optical properties of thin films; Calculation of the combined response...

  • Preparation of microcrystalline Si1-xCx thin films. Fujii, Yoshihisa; Hatano, Akitsugu; Suzuki, Akira; Yoshida, Masaru; Nakajima, Shigeo // Journal of Applied Physics;2/15/1987, Vol. 61 Issue 4, p1657 

    Presents a study wherein Si[sub1-x]C[subx] thin films were prepared by glow discharge method in a hydrogen-rich atmosphere at low substrate temperature. Superior properties of microcrystalline silicon to hydrogenated amorphous silicon; Measurement of the properties of Si[sub1-x]C[subx] thin...

  • A spectroscopic ellipsometry study of the growth and microstructure of glow-discharge amorphous and microcrystalline silicon films. Kumar, Satyendra; Pandya, D. K.; Chopra, K. L. // Journal of Applied Physics;3/1/1988, Vol. 63 Issue 5, p1497 

    Presents a study which conducted a spectroscopic ellipsometry investigation of the growth and microstructure of glow-discharged amorphous and microcrystalline silicon films. Experimental details and data analysis; Effect of deposition parameters; Description of the growth model.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics