Dislocation energies and hardness of semiconductors

Sher, A.; Chen, A.-B.; Spicer, W. E.
January 1985
Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p54
Academic Journal
The dislocation energies and hardness of semiconductors are calculated by an extension of Harrison’s method. It is demonstrated in agreement with experiment that dislocation energies per unit length are proportional to d-3– d-9, where d is the bond length and hardness is proportional to d-5– d-11. The hardness is related to the interaction energies among dislocations. It is argued that dislocation densities of semiconductors will be reduced if they are alloyed with a second constituent that has a shorter bond length. Experimental evidence supporting this strategy is noted.


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