TITLE

Mercury zinc telluride, a new narrow-gap semiconductor

AUTHOR(S)
Sher, Ariel; Eger, D.; Zemel, A.
PUB. DATE
January 1985
SOURCE
Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p59
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
For the first time the growth of single crystal solid solutions of Hg1-xZnxTe is demonstrated. Layers with compositions of x=0.16 and 0.23 having transmission cut-on wavelengths of 9.1 and 4.1 μm at 80 K, respectively, were grown by liquid phase epitaxy on CdTe substrates. The optical and electrical characteristics of the epilayers are similar to those obtained for Hg1-xCdxTe alloys.
ACCESSION #
9817342

 

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