Influence of light-induced defects in hydrogenated amorphous silicon on charge carrier dynamics

Werner, A.; Kunst, M.
January 1985
Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p69
Academic Journal
Charge carrier decay processes in hydrogenated amorphous silicon after extended illumination are studied by the time-resolved microwave conductivity method. It is shown that creation of metastable defects depends on illumination time. Two different defects can be distinguished: one which decreases the charge carrier lifetime in the bulk, whereas the other one increases the subband gap absorption at the surface.


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