TITLE

626.2-nm pulsed operation (300 K) of an AlGaInP double heterostructure laser grown by metalorganic chemical vapor deposition

AUTHOR(S)
Kobayashi, Kenichi; Hino, Isao; Suzuki, Tohru
PUB. DATE
January 1985
SOURCE
Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p7
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Room-temperature pulsed laser operation of (Al0.55Ga0.45)0.5In0.5P /(Al0.17Ga0.83)0.5In0.5P / (Al0.55Ga0.45)0.5In0.5P double heterostructure laser diodes grown by metalorganic chemical vapor deposition has been achieved. The lasing wavelength is 626.2 nm, which is the shortest ever reported for an AlGaInP double heterostructure laser. Threshold current density is 50 kA/cm2 for a diode with a 20-μm-wide and 200-μm-long stripe.
ACCESSION #
9817335

 

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