Optical properties of HgTe-CdTe superlattices

Wu, G. Y.; Mailhiot, C.; McGill, T. C.
January 1985
Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p72
Academic Journal
The first theoretical calculation of the optical properties of HgTe-CdTe superlattices is presented. The envelope function method is used to obtain the superlattice band structure, and then an interpolation scheme is employed to compute ε2(ω) the imaginary part of a dielectric function. The major conclusion is that the optical properties of the superlattice near the band edges are such that the absorption may be comparable to or ever larger than that in the alloys.


Related Articles

  • Photoluminescence processes in Si1-xGex/Si disordered superlattices grown on Si(001) substrate. Wakahara, Akihiro; Kuramoto, Kyosuke // Journal of Applied Physics;7/1/1997, Vol. 82 Issue 1, p392 

    Studies the photoluminesnce (PL) properties of Si1-xGex/Si disordered superlattices. Preparation of the samples; Temperature dependence of integrated PL intensity of the d-SL compared with the o-SL.

  • Optical response in two-dimensional optical superlattices with Kerr nonlinearity. Wang, Z.L.; Zhu, Y.Y. // Journal of Applied Physics;7/1/1996, Vol. 80 Issue 1, p25 

    Presents an analysis of the steady state optical response of two-dimensional optical superlattices with Kerr nonlinearity. Bloch wave approach; Effects of the modification of the refractive index modulation strengths in the superlattices and the angular deviation of incoming radiation from Bragg...

  • Enhancement of the photoluminescence intensity in short-period GaAs/AIAs superlattices with... Krylyuk, S.; Korbutyak, D.V.; Litovchenko, V.G.; Hey, R.; Grahn, H.T.; Ploog, K.H. // Applied Physics Letters;5/3/1999, Vol. 74 Issue 18, p2596 

    Deals with the enhancement of the photoluminescence intensity of superlattices with different well and barrier thickness. Method used in inducing the transition of the superlattices from an indirect to a direct energy; Effect of the reduction of barrier thickness on the conduction properties of...

  • Nonlinear optical characterization of a generalized Fibonacci optical superlattice. Yi-qiang Qin; Yong-yuan Zhu // Applied Physics Letters;7/26/1999, Vol. 75 Issue 4, p448 

    Studies the nonlinear optical characteristics in a generalized Fibonnaci optical superlattice. Quasi-phase-matched second-harmonic-generation spectrum; Similarity in reciprocal space.

  • High duty cycle operation of quantum cascade lasers based on graded superlattice active regions. Martini, Rainer; Gmachi, Claire; Tredicucci, Alessandro; Capasso, Federico; Hutchinson, Albert L.; Sivco, Deborah L.; Cho, Alfred Y.; Whittaker, Edward A. // Journal of Applied Physics;6/15/2001, Vol. 89 Issue 12, p7735 

    High duty cycle operation of quantum cascade superlattice lasers with graded superlattice active regions is investigated with the goal of achieving high average optical power. The optical output power increases with pulse width and decreases with heat sink temperature. This behavior is explained...

  • Photoluminescence and recombination mechanisms in GaN/Al[sub 0.2]Ga[sub 0.8]N superlattice. Bergman, Leah; Dutta, Mitra; Stroscio, M. A.; Stroscio, M.A.; Komirenko, S. M.; Komirenko, S.M.; Nemanich, Robert J.; Eiting, C.J.; Eiting, C. J.; Lambert, D.J.H.; Lambert, D. J. H.; Kwon, H.K.; Kwon, H. K.; Dupuis, R.D.; Dupuis, R. D. // Applied Physics Letters;4/10/2000, Vol. 76 Issue 15 

    A detailed study of photoluminescence (PL) of GaN(1 nm)/Al[sub 0.2]Ga[sub 0.8]N(3.3 nm) twenty periods superlattice grown via metal-organic chemical vapor deposition is presented. The dependence of the PL emission energy, linewidth, and intensity on temperature, in the low temperature regime, is...

  • New deep level luminescence bands observed from both a SiGe alloy layer and Si/Ge superlattice.... Higgs, V.; Lightowlers, E.C.; van de Walle, G.F.A.; Gravesteijn, D.J.; Montie, E.A. // Applied Physics Letters;11/11/1991, Vol. 59 Issue 20, p2579 

    Examines deep level luminescence bands from a silicon germanide alloy layer and silicon/germanium structures. Variation of the luminescence intensity with the superlattices composition; Effect of introducing deliberate copper contamination.

  • Optical properties of serpentine superlattices on GaAs vicinal substrates for quantum wire laser.... Jong Chang Yi; Dagli, Nadir // Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p219 

    Investigates the optical properties of serpentine superlattices (SSL) on gallium arsenide vicinal substrates. Examination of the natures miniband structure intermixing; Investigation of the effects of imperfect aluminum segregation between gallium arsenide wires and aluminum gallium arsenide...

  • Optical properties of spontaneous lateral composition modulation in AlAs/InAs short-period superlattices. Francoeur, S.; Zhang, Yong; Yong Zhang; Norman, A. G.; Norman, A.G.; Alsina, F.; Mascarenhas, A.; Reno, J. L.; Reno, J.L.; Jones, E. D.; Jones, E.D.; Lee, S. R.; Lee, S.R.; Follstaedt, D. M.; Follstaedt, D.M. // Applied Physics Letters;9/18/2000, Vol. 77 Issue 12 

    The effect of lateral composition modulation, spontaneously generated during the epitaxial growth of an AlAs/InAs short-period superlattice, on the electronic band structure is investigated using phototransmission and photoluminescence spectroscopy. Compared with uniform layers of identical...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics