TITLE

Stripe-geometry AlxGa1-xAs-GaAs quantum well heterostructure lasers defined by Si diffusion and disordering

AUTHOR(S)
Meehan, K.; Gavrilovic, P.; Holonyak, N.; Burnham, R. D.; Thornton, R. L.
PUB. DATE
January 1985
SOURCE
Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p75
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The use of Si diffusion and impurity-induced layer disordering, via a Si3N4 mask pattern, to construct stripe-geometry AlxGa1-xAs-GaAs quantum well heterostructure lasers on n-type substrates is described. This leads to a convenient form of index-guided buried-heterostructure laser that is easily constructed and replicated (in various geometries) on commonly available n-type GaAs substrate.
ACCESSION #
9817331

 

Related Articles

  • On the Internal Quantum Efficiency and Carrier Ejection in InGaAsP/InP-based Quantum-Well Lasers. Leshko, A. Yu.; Lyutetskiı, A. V.; Pikhtin, N. A.; Skrynnikov, G. V.; Sokolova, Z. N.; Tarasov, I. S.; Fetisova, N. V. // Semiconductors;Dec2000, Vol. 34 Issue 12, p1397 

    The optimization of InGaAsP/InP quantum-well laser heterostructures that had various configurations and emitted in the wavelength range from 1.26 up to 1.55 µm was carried out with the aim of maximizing the internal quantum efficiency and output optical power. It was experimentally shown that...

  • Coupled-stripe in-phase operation of planar native-oxide index-guided.... Kish, F.A.; Caracci, S.J. // Applied Physics Letters;1/6/1992, Vol. 60 Issue 1, p71 

    Examines the coupled-stripe in-phase operation of native-oxide quantum well heterostructure (QWH) laser arrays. Fabrication of two different sets of laser-diode arrays; Control of the native oxide layer thickness between emitters; Details on the continuous thresholds and power output of QWH...

  • High-performance planar native-oxide buried-mesa index-guided AlGaAs-GaAs quantum well.... Caracci, S.J.; Kish, F.A. // Applied Physics Letters;7/20/1992, Vol. 61 Issue 3, p321 

    Fabricates a high-performance planar buried-mesa index-guided AlGaAs-GaAs quantum well heterostructure lasers by oxidation. Exhibition of continuous laser thresholds with single longitudinal mode operation; Measurement of the external differential quantum efficiencies; Observation of the peak...

  • Photopumped room-temperature edge- and vertical-cavity operation of AlGaAs-GaAs-InGaAs.... Ries, M.J.; Richard, T.A. // Applied Physics Letters;8/8/1994, Vol. 65 Issue 6, p740 

    Examines the photopumped edge- and vertical-cavity laser operation of a quantum well heterostructure using native oxide distributed Bragg reflecting mirrors. Formation of the mirror by selective lateral oxidation; Index ration of the oxide-semiconductor mirrors; Refinement of the crystal design...

  • Prospects for truly blue.... Mensz, P.M. // Applied Physics Letters;11/21/1994, Vol. 65 Issue 21, p2627 

    Investigates the optical operation of quantum well laser heterostructures. Basis for the physical model; Calculation of the band structure of strained quantum well; Application of the non-parabolic subbands for the reduction of gain function complexity.

  • Reduced temperature sensitivity AlxGa1-xAs-GaAs quantum well lasers with (Si2)x(GaAs)1-x ‘‘barriers’’. Jackson, G. S.; Deppe, D. G.; Hsieh, K. C.; Holonyak, N.; Hall, D. C.; Burnham, R. D.; Thornton, R. L.; Paoli, T. L. // Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1156 

    The temperature dependence of threshold current of quantum well heterostructure (QWH) laser diodes is reduced by inserting (Si2)x(GaAs)1-x barriers in the active region. Alloy clustering of the (Si2)x(GaAs)1-x barriers, grown by metalorganic chemical vapor deposition, leads to further QW carrier...

  • Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser. Koren, U.; Miller, B. I.; Su, Y. K.; Koch, T. L.; Bowers, J. E. // Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1744 

    The structure and properties of a high performance InGaAs/InGaAsP separate confinement heterostructure multiple quantum well laser operating at 1.54 μm are described. The laser has low threshold current (18 mA), high quantum efficiency (22% facet), high cw output power (42 mW/facet), and weak...

  • Phonon-assisted stimulated emission in thin (<55 Ã…) AlGaAs-GaAs-AlGaAs single quantum wells. Lo, Y. C.; Kolbas, R. M. // Applied Physics Letters;12/5/1988, Vol. 53 Issue 23, p2266 

    Since the initial report of phonon-assisted stimulated emission in AlGaAs-GaAs quantum wells, several laboratories have performed similar experiments which have produced a wide range of experimental data and interpretations. We present photopumped laser data (77 K) from three different...

  • Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well.... Baranov, A.N.; Cuminal, Bertu Y. // Applied Physics Letters;8/11/1997, Vol. 71 Issue 6, p735 

    Examines the room-temperature laser emission from type III multiple quantum well (MQW) heterostructures. Observation of intense electroluminescence; Use of special shutter sequences at the indium arsenide-gallium antimonide (InAs/GaSb) interface; Details on the emission characteristics of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics