TITLE

Microstructure and formation mechanism of porous silicon

AUTHOR(S)
Beale, M. I. J.; Chew, N. G.; Uren, M. J.; Cullis, A. G.; Benjamin, J. D.
PUB. DATE
January 1985
SOURCE
Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p86
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A systematic study is presented of the effects of silicon dopant type, resistivity, current density, and hydrofluoric acid concentration on the formation and properties of porous silicon. Cross-section transmission electron microscopy revealed the presence of two distinct microstructures. The structure formed is determined by the doping level with the transition occurring near degeneracy. A model of the anodisation process is presented which is based on the semiconducting properties of the material and which explains the formation of the two different types of porous structure observed.
ACCESSION #
9817324

 

Related Articles

  • Dynamics of an electrolyte—n-type silicon system during anodization in hydrofluoric acid solutions. Buchin, É. Yu.; Prokaznikov, A. V. // Technical Physics Letters;Mar97, Vol. 23 Issue 3, p169 

    The dynamics of the morphology of porous silicon during anodization in hydrofluoric acid has been investigated. The current-voltage characteristics and their variation with time as well as the time dependence of the voltage in an electrolyte-silicon system are highly informative for the...

  • Porous silicon microstructure as studied by transmission electron microscopy. Chuang, S.-F.; Collins, S. D.; Smith, R. L. // Applied Physics Letters;10/9/1989, Vol. 55 Issue 15, p1540 

    Cross-sectional and plan-view transmission electron micrograph analysis of the structure of porous silicon reveals that the pore walls are also porous, yielding a large distribution of pore sizes for a given porous silicon sample. This infrastructure appears to be a universal morphological...

  • Preferential propagation of pores during the formation of porous silicon: A transmission electron microscopy study. Chuang, S.-F.; Collins, S. D.; Smith, R. L. // Applied Physics Letters;8/14/1989, Vol. 55 Issue 7, p675 

    A transmission electron microscopy study of porous silicon reveals that pores selectively propagate in the <100> crystallographic directions on both n- and p-type silicon, independent of dopant concentration or anodization conditions.

  • Cyclic shifts in the photoluminescence spectra of the porous Si in HF. Ichinohe, T.; Nozaki, S. // Applied Physics Letters;3/27/1995, Vol. 66 Issue 13, p1644 

    Examines the cyclic shifts in the photoluminescence spectra of the porous Si in HF. Difference between the origin of visible light luminescence from porous Si layer in air and HF solution; Significance of the presence of oxygen at the surface; Illumination of the porous Si layer in the HF solution.

  • Etching technique for transmission electron microscopy observation of nanostructure of visible.... Teschke, O.; Goncalves, M.C. // Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1348 

    Observes transmission electron microscopy of nanostructure of visible luminescent porous silicon using etching technique. Cause of pore formation in silicon; Observation of irregular matrix of pores; Independence of the large pore axis orientation with preferential etching direction.

  • Transmission electron microscopy study of chemically etched porous Si. Shih, S.; Jung, K.H.; Qian, R.-Z.; Kwong, D.L. // Applied Physics Letters;2/1/1993, Vol. 62 Issue 5, p467 

    Develops an approach for the examination of chemically etched (CE) porous silicon layer by transmission electron microscopy (TEM). Fabrication of the CE layer following plan-view TEM sample preparation; Existence of crystalline, polycrystalline and amorphous phases; Transition of microstructure...

  • Porous silicon formation: A quantum wire effect. Lehmann, V.; Gosele, U. // Applied Physics Letters;2/25/1991, Vol. 58 Issue 8, p856 

    Focuses on the formation of porous silicon layers on nondegenerated p-type silicon electrodes in hydrofluoric acid electrolytes. Increased band gap compared to bulk silicon; Translucent for visible light; Two-dimensional quantum confinement in the very narrow walls between the pores.

  • Positron annihilation in porous silicon. Itoh, Yoshiko; Murakami, Hideoki // Applied Physics Letters;11/15/1993, Vol. 63 Issue 20, p2798 

    Examines the positron annihilation in porous silicon made by anodization in hydrofluoric acid. Difference of the porous silicon Doppler-broadened spectrum from crystal silicon; Role of the porous structure in positronium formation; Association of the lifetimes with free positron annihilation.

  • Enhanced luminescence from catalyst-free grown InP nanowires. Mattila, M.; Hakkarainen, T.; Lipsanen, H.; Jiang, H.; Kauppinen, E. I. // Applied Physics Letters;1/15/2007, Vol. 90 Issue 3, p033101 

    The surface effects in the optical properties of catalyst-free grown InP nanowires are investigated. Both as-grown nanowires and nanowires treated with hydrofluoric acid are studied using low- and room-temperature continuous-wave and time-resolved photoluminescence measurements and transmission...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics