Transport properties of an ion implanted polydiacetylene

Elman, B. S.; Sandman, D. J.; Newkirk, M. A.
January 1985
Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p100
Academic Journal
Using 150-keV 75As ion beam irradiation, the conductivity of poly [1.6-bis (N-carbazolyl)-2.4 hexadiyne] crystals is increased by more than 15 orders of magnitude with respect to the value for unimplanted material. dc resistivity measurements are performed in the temperature range 20 K190 K) temperatures and m[bar_over_tilde:_approx._equal_to]1/2 at low (T<80 K) temperatures. Mechanisms of conduction are considered in terms of existing theoretical models.


Related Articles

  • Improved polycrystalline silicon sheet resistance by rapid thermal annealing prior and subsequent to ion implantation. Wilson, S. R.; Gregory, R. B.; Paulson, W. M.; Krause, S. J.; Leavitt, J. A.; McIntyre, L. C.; Seerveld, J. L.; Stoss, P. // Applied Physics Letters;9/15/1986, Vol. 49 Issue 11, p660 

    Polycrystalline Si films on oxidized Si wafers have been subjected to a rapid thermal processing anneal prior to As ion implantation. After ion implantation the films are given another rapid thermal processing anneal to activate the As. The preimplant anneal causes the as-deposited grain size to...

  • Epitaxial regrowth of n[sup +] polycrystalline silicon at 850 degree C, induced by fluorine.... Moiseiwitsch, N.E.; Marsh, C. // Applied Physics Letters;4/10/1995, Vol. 66 Issue 15, p1918 

    Examines the epitaxial regrowth of polycrystalline silicon (polysilicon) at lower temperatures. Implantation of fluorine ions into polysilicon; Use of transmission electron microscopy; Relationship between sheet resistance and emitter drive-in time.

  • Grain growth in arsenic-implanted polycrystalline Si. Zheng, L. R.; Hung, L. S.; Mayer, J. W. // Applied Physics Letters;12/21/1987, Vol. 51 Issue 25, p2139 

    Transmission electron microscopy and Rutherford backscattering were used with polycrystalline Si films implanted at 100 keV with 3×1016 arsenic ions/cm2. During annealing, grain growth occurred first in the implanted portion, then arsenic diffused into the unimplanted poly-Si, and finally...

  • A model of conduction in polycrystalline silicon films. Ada-Hanifi, M.; Sicart, J.; Dusseau, J. M.; Robert, J. L. // Journal of Applied Physics;9/1/1987, Vol. 62 Issue 5, p1869 

    Deals with a study which presented an interpretation of the electrical behavior of polycrystalline semiconductors which takes into account intergranular fluctuations in potential. Suspicion made on intergranular doping concentration fluctuations; Result that can occur in many defects induced in...

  • Ambient and dopant effects on boron diffusion in oxides. Wong, C. Y.; Lai, F. S. // Applied Physics Letters;6/16/1986, Vol. 48 Issue 24, p1658 

    Diffusion of boron from ion implanted polycrystalline silicon source through 12.5 nm oxides was measured as a function of annealing ambience and doping concentrations of phosphorus or arsenic in the polycrystalline silicon. For comparison, boron ion implanted into 500 nm oxides was also...

  • Boron diffusion in silicon at high concentrations. Orr Arienzo, W. A.; Glang, R.; Lever, R. F.; Lewis, R. K.; Morehead, F. F // Journal of Applied Physics;1/1/1988, Vol. 63 Issue 1, p116 

    Compares boron diffusion from a gaseous source to that from polycrystalline silicon sources. Use of secondary ion mass spectroscopy to determine the diffusion profiles; Application of Boltzmann-Matano analysis; Boron depth profiles of the samples with ion implanted polycrystalline silicon and...

  • Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO2. Iverson, R. B.; Reif, R. // Journal of Applied Physics;6/15/1985, Vol. 57 Issue 12, p5169 

    Presents a study which developed a model which accounts for the variation of grain size with dose for implanted and annealed polycrystalline silicon films. Enhancement of the grain size of a polycrystalline silicon film using ion implantation; Effect of an ion penetrating a crystal on the...

  • Phase Transformations Initiated in Thin Layers of Amorphous Silicon by Nanosecond Excimer Laser Pulses. Ivlev, G. D.; Gatskevich, E. I. // Semiconductors;May2003, Vol. 37 Issue 5, p604 

    The reflection of a probing beam with a &lembda; = 0.63mm from a silicon surface layer (a-Si) amorphized by ion implantation was detected during its melting and solidification initiated by excimer ArF laser radiation. When the irradiation energy is below the epitaxial threshold, a single event...

  • Formation of a solid lubricant in boron carbide by nitrogen ion implantation and laser annealing. Reeber, Robert R.; Kusy, Robert P.; Yu, Ning; Chu, Wei-Kan // Applied Physics Letters;3/12/1990, Vol. 56 Issue 11, p1075 

    A boron nitride(lubricant)/boron carbide composite (approximately 70% boron nitride) has been formed in approximately the first 750 Å of surface and near-surface regions of a polycrystalline boron carbide sample by implanting nitrogen (N) ions at 100 keV with a total dose of 4×1017 N...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics