Mechanism of oxygen plasma etching of polydimethyl siloxane films

Chou, N. J.; Tang, C. H.; Paraszczak, J.; Babich, E.
January 1985
Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p31
Academic Journal
We have used x-ray photoelectron spectroscopy and multiple internal reflection infrared spectroscopy to study the etching of polysiloxane films in an rf oxygen plasma. The results indicate that a structurally strained SiO2 layer, ∼1 nm thick, is formed on the film exposed to oxygen plasma. For a given rf power input this oxidized overlayer recedes with the etching front in a steady state fashion, acting as a protective layer for the underlying polysiloxane film. The etching mechanism is effectively a combination of two competitive processes, namely, ion sputtering and oxidation.


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