Diode structures formed by rapid thermal annealing of boron implanted silicon

Lunnon, M. E.; Chen, J. T.; Baker, J. E.
January 1985
Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p35
Academic Journal
Rapid annealing of boron implanted (100) silicon has been used to fabricate p+-n diodes. After an implant dose of 3×1015 ion cm-2 and a 1-s anneal at 1100 °C, a sheet resistance of 40 Ω/[Laplacian_variant] is obtained. The junction depth is 0.34 μm, measured by spreading resistance profiling. The leakage current at -5 V is 40 nA cm-2. Secondary ion mass spectrometry shows that the boron dopant diffuses rapidly ([bar_over_tilde:_approx._equal_to]50 nm) during the first second of an anneal at 1100 °C. The residual implantation damage does not appear to have a deleterious effect on diode characteristics.


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