High performance photovoltaic infrared devices in Hg1-xCdxTe on sapphire

Reidel, R. A.; Gertner, E. R.; Edwall, D. D.; Tennant, W. E.
January 1985
Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p64
Academic Journal
A combination of organometallic vapor phase epitaxy and liquid phase expitaxy (LPE) has been used to grow CdTe on sapphire. The resultant heterostructure has been used as a substrate for LPE growth of Hg0.7Cd0.3Te. Photodiodes in the HgCdTe show excellent properties. Typical R0A products are ≥106 Ω cm at 77 K for Hg1-xCdxTe layers with cut-off wavelengths of 4.8–5.2 μm at 77 K. The backside-illuminated spectral response was broadband with quantum efficiencies typically >80% (without antireflection coating).


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