High resistivity InGaAs(Fe) grown by a liquid phase epitaxial substrate-transfer technique

Groves, S. H.; Diadiuk, V.; Plonko, M. C.; Hovey, D. L.
January 1985
Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p78
Academic Journal
Reproducible growth of high quality InGaAs(Fe) by liquid phase epitaxy has been achieved by using long pregrowth bakes and a substrate-transfer apparatus. A mixed conduction model with fixed electron and hole mobilities is shown to explain the large variation of transport properties with Fe doping. This model predicts a maximum resistivity of 2500 Ω cm, and samples with resistivities within 5% of this value have been grown.


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