High resistivity InGaAs(Fe) grown by a liquid phase epitaxial substrate-transfer technique

Groves, S. H.; Diadiuk, V.; Plonko, M. C.; Hovey, D. L.
January 1985
Applied Physics Letters;Jan1985, Vol. 46 Issue 1, p78
Academic Journal
Reproducible growth of high quality InGaAs(Fe) by liquid phase epitaxy has been achieved by using long pregrowth bakes and a substrate-transfer apparatus. A mixed conduction model with fixed electron and hole mobilities is shown to explain the large variation of transport properties with Fe doping. This model predicts a maximum resistivity of 2500 Ω cm, and samples with resistivities within 5% of this value have been grown.


Related Articles

  • Planar avalanche photodiode with a low-doped, reduced curvature junction. Chi, G. C.; Muehlner, D. J.; Ostermayer, F. W.; Freund, J. M.; Pawelek, R.; McCoy, R. J.; Peticolas, L. J.; Mattera, V. D. // Applied Physics Letters;4/27/1987, Vol. 50 Issue 17, p1158 

    A planar InP/InGaAsP avalanche photodiode with a reduced junction curvature and low p-type doping was fabricated by Be+ implantation through a photoelectrochemically etched InGaAs mask. A uniform gain as high as 15 was obtained without edge or surface breakdown. The device had a separated...

  • Effect of Al doping on low-temperature epitaxy of 3C-SiC/Si by chemical vapor deposition using.... Takahashi, Koji; Nishino, Shigehiro; Saraje, Junji // Applied Physics Letters;10/26/1992, Vol. 61 Issue 17, p2081 

    Examines the effect of acceptor impurity doping on semiconductor low temperature epitaxy using the hexamethyldisilane gas system. Influence of the carbonized buffer layer on the crystal structure of the undoped grown films; Determination of the difference between the measured and the actual...

  • Nitrogen doping of Te-based II-VI compounds during growth by molecular beam epitaxy. Baron, T.; Saminadayar, K.; Magnea, N. // Journal of Applied Physics;2/1/1998, Vol. 83 Issue 3, p1354 

    Presents a study of p-type doping of Te-based compounds and alloys during molecular beam epitaxy. Identification of the compounds and alloys used; Characterization of the alloys and compounds; Details on the experiments conducted; Doping efficiency and transport properties of the compounds and...

  • Low-temperature photoluminescence of sulfur- and magnesium-doped InGaP epilayers grown by liquid-phase epitaxy. Jiang, Gwo-Cherng // Journal of Applied Physics;2/15/1996, Vol. 79 Issue 4, p2060 

    Presents a study which investigated sulfur- (n-type) and magnesium (p type) doped InGaP layers grown by liquid-phase epitaxy by low temperature photoluminescence measurements in the energy range between 1.55 and 2.25 eV. Experimental procedures; Results of the study; Conclusions.

  • Controlled p- and n-type doping of homo- and heteroepitaxially grown InSb. Thompson, Philip E.; Davis, John L.; Yang, Ming-Jey; Simons, David S.; Chi, Peter H. // Journal of Applied Physics;12/1/1993, Vol. 74 Issue 11, p6686 

    Investigates controlled p-type and n-type doping of homoepitaxially and heteroepitaxially grown InSb. Estimation of the doping efficiency of beryllium in InSb; Features of the p-type dopant profiles produced in InSb with Be; Analysis of the positional stability of beryllium.

  • Very high carbon δ -doping concentration in AlxGa1-xAs grown by metalorganic vapor phase epitaxy using trimethylaluminum as a doping precursor. Li, G.; Petravic, M.; Jagadish, C. // Journal of Applied Physics;4/1/1996, Vol. 79 Issue 7, p3554 

    Presents a study which examined carbon delta-doped Al[subx]Ga[sub1-x]As grown in metalorganic vapor phase epitaxy. Review of related literature; Description of the experimental setup; Results.

  • Mechanism for heavy Fe doping of epitaxial GaAs/AlGaAs heterostructures. Gerlovin, I. Ya.; Dolgikh, Yu. K.; Eliseev, S. A.; Efimov, Yu. P.; Nodokus, I. A.; Ovsyankin, V. V.; Petrov, V. V.; Ber, B. Ya. // Semiconductors;Mar1999, Vol. 33 Issue 3, p305 

    Heterostructures which are maximally doped with iron and which contain bulk layers of GaAs and Al[sub x]Ga[sub 1 - x]As, as well as GaAs/AlGaAs superlattices are grown on an EP-1302 molecular-beam epitaxy system. An analysis of secondary-ion mass spectrometry profiles of the iron penetration...

  • Lateral diffusion of sources during selective growth of Si-doped GaAs layers by metalorganic vapor phase epitaxy. Hara, Naoki; Shiina, Kazushige; Ohori, Tatsuya; Kasai, Kazumi; Komeno, Junji // Journal of Applied Physics;7/15/1993, Vol. 74 Issue 2, p1327 

    Deals with a study which analyzed lateral diffusion of sources during growth of silicon-doped gallium arsenide layers by metalorganic vapor phase epitaxy. Experimental details; Results and discussion; Speculation on diffusion materials.

  • The doping concentration dependence of zinc and tin in InGaAs. Su, Y. K.; Wu, M. C.; Huang, C. H.; Chiu, B. S. // Journal of Applied Physics;8/15/1988, Vol. 64 Issue 4, p2211 

    Presents information on a study which investigated the physical properties of the doped In[sub0.53]Ga[sub0.47]As epitaxial layers. Growth of the epitaxial layers by liquid-phase epitaxy; Intensity of saturated distant pair emission; Discussion of the broad spectrum for the sample shown.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics