Electronic structure of oxygen thermal donors in silicon

Robertson, J.; Ourmazd, A.
March 1985
Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p559
Academic Journal
The electrical activity of oxygen-related thermal donors in the model of Ourmazd, Bourret, and Schröter is shown to derive from the shallow, doubly occupied pπ state of a divalent silicon at the center of a cluster of five or more oxygens.


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