Linear rate oxidation of silicon for oxidation effect investigation

Mizuo, Shoichi; Higuchi, Hisayuki
March 1985
Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p587
Academic Journal
Oxidation of Si was performed by varying oxygen partial pressure during oxidation. A linear relation between oxide thickness and oxidation time was obtained under a linear increase of oxygen partial pressure. The effect of linear oxidation was examined on B and P diffusion in Si. Linear rate oxidation can be used for investigation of oxidation enhanced or retarded diffusion of impurities and growth kinetics of stacking faults in Si.


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