TITLE

Raman spectroscopy of reactive ion etching induced subsurface damage

AUTHOR(S)
Tsang, J. C.; Oehrlein, G. S.; Haller, Ivan; Custer, J. S.
PUB. DATE
March 1985
SOURCE
Applied Physics Letters;3/15/1985, Vol. 46 Issue 6, p589
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Raman spectroscopy has been used to characterize the surface modifications introduced into Si(100) by reactive ion etching with a CF4/H2 plasma. Both Raman scattering due to the destruction of crystalline long range order by lattice damage and the stretching modes of protons bonded to Si atoms have been observed without any special sample preparation. Our results are consistent with backscattering and nuclear reaction profiling studies of similarly prepared samples and Raman studies of Si(100) bombarded by low-energy protons and Ar ions.
ACCESSION #
9817258

 

Related Articles

  • Raman spectral studies of the dynamics of ions in molten LiNO3–RbNO3 mixtures. I. Rotational relaxation. Katō, Toshiko; Takenaka, Tohru // Journal of Chemical Physics;3/15/1986, Vol. 84 Issue 6, p3405 

    The Raman spectra of the ν1(A’1) mode of NO-3 ions in molten LiNO3–RbNO3 mixtures are measured at various concentrations and at temperatures from 478 to 750 K. Rotational correlation functions are calculated from the Raman spectra. Reorientation of the trigonal axis of an NO-3...

  • Polarized Raman spectroscopy in ion irradiated graphite. Compagnini, G.; Baratta, G. // Applied Physics Letters;10/12/1992, Vol. 61 Issue 15, p1796 

    Examines the use of polarized Raman spectroscopy to assess the disorder induced by energetic ions in the carbon matrix. Details on the depolarization ratio at early stages of ion irradiation; Formation of anisotropic damage caused by ion collision cascade; Effects of polarization on incident...

  • Micro-Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation. Teichert, J.; Bischoff, L.; Hausmann, S.; Voelskow, M.; Hobert, H. // Applied Physics A: Materials Science & Processing;2000, Vol. 71 Issue 2, p175 

    Abstract. The lattice damage of silicon produced by ion implantation at extremely high current density of 0.8 A/cm[sup 2] (2.5 x 10[sup 18] cm[sup -2] s[sup -1]) was investigated. In a focused ion beam system, implantation was carried out with 70 kev Co ions, fluences of 1.2 x l0[sup 16]cm[sup...

  • Raman spectroscopic study on the vibrational and rotational relaxation of OH- ion in molten LiOH. Okazaki, Susumu; Ohtori, Norikazu; Okada, Isao // Journal of Chemical Physics;11/1/1989, Vol. 91 Issue 9, p5587 

    Raman scattering spectra have been measured for molten LiOH at 773 K. The highly corrosive melt was held as a drop under a silver wire ring. While the Rayleigh wing spread over more than 1000 cm-1, only one distinct peak for the OH- stretching mode appeared at 3607 cm-1, the band shape being...

  • Investigation of Fe[sup +3] and Fe[sup +2] properties in calcium aluminoborate glasses. Pascoal, H.B.; Pontuschka, W.M.; Rechenberg, H. // Applied Physics A: Materials Science & Processing;2000, Vol. 70 Issue 2, p211 

    Abstract. Ferric and ferrous ions were investigated by employing [sup 57]Fe Mossbauer, Raman spectroscopy, and EPR to xCaO:(80 - x)B[sub 2]O[sub 3]:20Al[sub 2]O[sub 3] + yFe[sub 2]O[sub 3] glasses providing information about their relative concentrations and local structural properties of the...

  • Raman spectra analysis of ZrO2 thermally grown on Zircaloy substrates irradiated with heavy ion: Effects of oxygen isotopic substitution. Ciszak, Clément; Mermoux, Michel; Gutierrez, Gaëlle; Leprêtre, Frédéric; Duriez, Christian; Popa, Ioana; Fayette, Laurent; Chevalier, Sébastien // Journal of Raman Spectroscopy;Mar2019, Vol. 50 Issue 3, p425 

    Recently, unusual Raman signals were observed in different works conducted on thin zirconia layers grown on zirconium alloys simulating in‐reactor materials after high fluence ion irradiation or for samples cut from fuel rods irradiated in nuclear plants. As such, these spectra clearly do...

  • Abnormal Raman spectra in Er-doped BaTiO3 ceramics. Lu, Da‐Yong; Cheng, Wei; Sun, Xiu‐Yun; Liu, Qiao‐Li; Li, De‐Xu; Li, Zhong‐Yu // Journal of Raman Spectroscopy;Oct2014, Vol. 45 Issue 10, p963 

    Greatly enhanced and abnormal Raman spectra were discovered in the nominal (Ba1 − xEr x)Ti1 − x/4O3 ( x = 0.01) (BET) ceramic for the first time and investigated in relation to the site occupations of Er3+ ions. BaTiO3 doped with Ti-site Er3+ mainly exhibited the common Raman...

  • Relationship between Raman spectral features and fugacity in mixtures of gases. Lamadrid, Hector M.; Steele‐MacInnis, Matthew; Bodnar, Robert J. // Journal of Raman Spectroscopy;Mar2018, Vol. 49 Issue 3, p581 

    Abstract: Raman spectroscopy yields information about the internal vibrational modes of covalently bonded molecules, which are sensitive to the local molecular environment. As such, Raman spectra of a gas composed of covalently bonded molecules collected at different temperatures and/or...

  • Amorphization processes in self-ion-implanted Si: Dose dependence. Motooka, T.; Holland, O.W. // Applied Physics Letters;5/27/1991, Vol. 58 Issue 21, p2360 

    Investigates the structural transformation in self-ion-implanted silicon using Raman spectroscopy and Rutherford backscattering spectrometry. Changes in the crystal silicon Raman peak; Attribution of peak shifts to uniaxial lattice expansion in the direction normal to the silicon surface;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics